Semiconductor Gate Measurement via Antifuse Connection
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Solution Overview
Problem
Existing voltage-controlled power semiconductor switch components face challenges in independently measuring gate oxide quality due to fixed wiring, requiring additional manufacturing steps and sensitive wire bonds, which are costly and prone to mechanical damage.
Innovation Solution
A connection device initially insulating between the control terminal and series device, which can be transferred into a conductive state for measurement, eliminating the need for subsequent bonding and allowing reversible or irreversible transitions, using antifuse structures or semiconductor switches for activation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If wire bonds are used to connect the gate measuring pad and series device, then the gate leakage current can be measured independently, but the device complexity increases and reliability decreases due to mechanical sensitivity
Solution Approach 1:
The patent extracts the measurement function from the permanent connection structure by providing a separate gate measuring pad that is initially not contacted with the series device. This allows independent measurement of gate leakage current without requiring wire bonds to connect the measuring pad to the series device, thereby eliminating the mechanical reliability issues associated with wire bonds while maintaining measurement capability.
2Measurement precision
If wire bonds are used to connect the gate measuring pad and series device, then the gate leakage current can be measured independently, but manufacturing costs increase due to additional bonding steps
Solution Approach 1:
The patent extracts the measurement function from the permanent connection structure by providing a separate gate measuring pad that is initially not contacted with the series device. This allows independent measurement of gate leakage current without requiring wire bonds to connect the measuring pad to the series device, thereby eliminating the mechanical reliability issues associated with wire bonds while maintaining measurement capability.
3Reliability
If the gate is electrically separated from the series device via gate oxide layer, then proper insulation is achieved, but the gate leakage current cannot be measured independently of series device current
Solution Approach 1:
The patent segments the electrical connection paths by providing a separate gate measuring pad that is electrically isolated from the series device through the gate oxide layer during measurement. The measuring pad can be contacted independently with a test needle to measure gate leakage current without current flowing through the series device, thus enabling precise measurement while maintaining proper insulation.
4Measurement precision
If two bond pads are provided for measurement, then gate leakage current can be measured, but additional installation space is required which interferes with integrated circuit design
Solution Approach 1:
The patent merges the gate measuring pad with the gate bond pad structure, allowing both measurement and permanent connection functions to share the same physical location. The gate measuring pad is positioned such that it can be contacted independently during measurement, and after measurement, the same pad area can be used for wire bonding to the series device, thereby minimizing additional space requirements while maintaining measurement capability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables independent measurement of gate leakage current and stress without affecting the series device, reducing manufacturing costs and improving reliability and automotive suitability by eliminating the need for wire bonds and minimizing space requirements.
Implementation Method 1
a connection device, which is initially sufficiently insulating or high-resistance to allow a measurement of the semiconductor component and which subsequently can be transferred into a conductive or low-resistant state
Implementation Method 2
U.S. Pat. No. 6,773,967 disclose such fusible link structures, which are also referred to as 'antifuses' and may be irreversibly transferred by a power pulse from a high-resistance state into a low-resistance state. In this case, a pn-transition is destroyed in U.S. Pat. No. 5,818,749, and a dielectric, insulating layer is destroyed in U.S. Pat. No. 6,773,967
Data Source
AI summary
An electrical circuit device includes a semiconductor component which has power terminals and a control terminal electrically insulated from the power terminals, for applying a control voltage, and a control terminal contact surface for contacting the control terminal for measuring the electrical behavior of the semiconductor component. A connection device is provided, via which the control terminal is electrically connectable to a series device, the connection device being transferable from a nonconductive state into a conductive state, in which the control terminal is connected to the series device.


