Semiconductor Gate Structures with Asymmetric Spacing
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Solution Overview
Problem
As semiconductor devices miniaturize, there is a need for technologies that reduce the short channel effect and capacitance between contacts, while forming contacts in increasingly smaller regions effectively.
Innovation Solution
The semiconductor device incorporates a specific arrangement of gate structures and source/drain contacts with varying distances and sizes, including narrow and wide source/drain contacts, and a gate contact, to efficiently intersect active regions and reduce capacitance, with a focus on non-uniform spacing and size configurations to optimize contact formation and electrical connectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the device size is reduced to continue miniaturization, then the short channel effect is reduced and integration density is improved, but the capacitance between contacts increases and contact formation becomes more difficult
Solution Approach 1:
The gate structure is segmented into multiple gates (first gate and second gate) with different spacing configurations. The first space between adjacent gates is smaller than the second space, creating non-uniform segmentation that reduces overall capacitance while maintaining effective control over the channel region
Solution Approach 2:
Different regions of the gate structure have different local properties: the first gate region has closer spacing to reduce capacitance in that local area, while the second gate region has larger spacing to prevent short channel effects. This local quality variation allows simultaneous optimization of both capacitance and channel control
2Volume of moving object
If the device size is reduced to continue miniaturization, then integration density is improved, but contact formation in reduced regions becomes more difficult
Solution Approach 1:
The gate structure is divided into multiple segments with varying spacing, creating distinct regions that facilitate different manufacturing considerations. The non-uniform spacing allows for optimized contact formation in each region while maintaining overall miniaturization
Solution Approach 2:
The invention transitions from a single-dimensional uniform gate spacing to a multi-dimensional structure with varying spacing in different regions. This dimensional complexity allows simultaneous optimization of contact formation ease and device miniaturization by creating favorable local geometries for contact fabrication
3Ease of manufacture
If uniform spacing is used between gate structures, then manufacturing simplicity is maintained, but capacitance reduction and short channel effect control are suboptimal
Solution Approach 1:
The gate structure employs asymmetric spacing where the first space between adjacent gates is smaller than the second space. This asymmetric configuration optimizes capacitance reduction and short channel effect control while remaining manufacturable through standard lithographic processes
4Ease of manufacture
If uniform spacing is used between gate structures, then manufacturing simplicity is maintained, but short channel effect control is suboptimal
Solution Approach 1:
The asymmetric gate spacing configuration with the first space smaller than the second space provides optimized control over the channel region, improving reliability by reducing short channel effects while maintaining compatibility with standard manufacturing processes
Data Source
AI summary
A semiconductor device includes first to fourth gate structures sequentially disposed in a first horizontal direction. Each of the first to fourth gate structures includes a gate electrode and a gate capping layer and first to third source/drain regions disposed among the first to fourth gate structures. A first narrow source/drain contact, a first wide source/drain contact, and a second narrow source/drain contact are disposed among the first to fourth gate structures and contact the first to third source/drain regions, respectively. The first to fourth gate structures are disposed with first to third distances there among. The second distance is greater than the first distance and the third distance. A lower end of the first narrow source/drain contact is disposed at a higher level than a lower end of the first wide source/drain contact.