Semiconductor Electrode Layout for Gate Connection and Breakdown Voltage
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Solution Overview
Problem
Conventional semiconductor devices face challenges in efficiently connecting external gate electrodes to internal gate electrodes while maintaining the connection of FP electrodes to the source electrode, which affects the effective element area and breakdown voltage.
Innovation Solution
The semiconductor device incorporates a protrusion from the pad portion of the external gate electrode that covers and connects to the internal gate electrode, while the source electrode includes covering portions that connect to both the FP electrode and the semiconductor part, ensuring effective electrical connections.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If the external gate electrode is connected to the internal gate electrode using a conventional structure, then the electrical connection is established, but the effective element area is reduced and the breakdown voltage is limited
Solution Approach 1:
The patent transitions from a planar connection structure to a three-dimensional structure by forming a protrusion that extends vertically from the pad portion through the insulation film to contact the internal gate electrode. This vertical dimension allows the external gate electrode to connect to the internal gate electrode without occupying additional horizontal space, thereby increasing the effective element area while maintaining reliable electrical connection and breakdown voltage performance.
Solution Approach 2:
The protrusion structure is nested within the existing device architecture, where the protrusion extends from the pad portion through the insulation film to contact the internal gate electrode. The source electrode's covering portions are nested around the protrusion structure, enclosing it while maintaining electrical connections. This nesting approach allows multiple functional elements to coexist in a compact arrangement, maximizing the effective element area without compromising connection reliability.
2Reliability
If the source electrode connects to the FP electrode, then the electrical connection is established, but the connection between the internal gate electrode and external gate electrode is disrupted
Solution Approach 1:
The source electrode is divided into multiple covering portions that perform different functions: some covering portions contact the FP electrode to establish its electrical connection, while other covering portions contact the protrusion to connect the internal gate electrode to the external gate electrode. This segmentation allows the source electrode to simultaneously maintain both critical electrical connections without disruption, resolving the contradiction between connection reliability and device complexity.
Data Source
AI summary
A semiconductor device includes: a second electrode, located in a semiconductor part, extending in a first direction; a third electrode, located in the semiconductor part, including a first portion, a second portion, and a first middle portion positioned below the second electrode between the first portion and the second portion, the second electrode being located between the first portion and the second portion in the first direction; a fourth electrode, located above the semiconductor part, including a pad portion separated from the second electrode and the second portion in a second direction, and a protrusion protruding from the pad portion and covering the second electrode and being connected to the second electrode; and a fifth electrode, located above the semiconductor part, including a first covering portion being connected to the first contact portion and a second covering portion being connected to the first portion.