Semiconductor Gate Electrode Fabrication with Conductive Buffer Layer
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Solution Overview
Problem
As semiconductor devices become more highly integrated, the narrowing of the gate region width affects the electrical properties of transistors, requiring advanced methods for fabricating semiconductor devices that maintain performance and integration while reducing costs.
Innovation Solution
A method involving the formation of conductive buffer layers and mask patterns using materials like TiN and amorphous silicon, with ion implantation processes to create impurity regions and source/drain structures, allowing for precise control of transistor dimensions and electrical properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the gate region width is narrowed to achieve high integration, then the degree of integration is improved, but the electrical properties of the transistor deteriorate
Solution Approach 1:
A conductive buffer layer is formed in advance on the gate electrode before the ion implantation process. This preliminary action prepares the surface to control impurity penetration, ensuring that even when the gate width is narrowed for high integration, the electrical properties are maintained by preventing excessive impurity diffusion into the channel region.
Solution Approach 2:
The conductive buffer layer acts as an intermediary between the gate electrode and the substrate. It mediates the ion implantation process by providing a controlled interface that allows precise management of impurity regions, thus maintaining transistor electrical properties while enabling narrow gate structures for high integration.
2Productivity
If the gate region width is narrowed to achieve high integration, then the degree of integration is improved, but the gap between source and drain regions is narrowed, affecting transistor performance
Solution Approach 1:
The conductive buffer layer is formed preliminarily on the gate electrode before ion implantation. This allows precise control over the impurity distribution in the source and drain regions, enabling the maintenance of adequate spacing between source and drain even when the overall gate region width is narrowed for high integration.
3Device complexity
If ion implantation is performed directly on the gate electrode, then the process is simplified, but impurity penetration affects the channel region and degrades transistor electrical properties
Solution Approach 1:
The conductive buffer layer serves as an intermediary layer between the gate electrode and the substrate. It enables the ion implantation process to proceed while controlling impurity penetration, preventing contaminants from reaching the channel region and degrading transistor electrical properties.
Solution Approach 2:
Instead of relying solely on physical mask structures to control ion implantation, the patent uses a material-based solution (conductive buffer layer) to control impurity penetration. This substitutes a mechanical masking approach with a materials science approach, maintaining process simplicity while ensuring device performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the fabrication of semiconductor devices with improved electrical properties and integration density while reducing costs, addressing the challenges of scaling down transistor sizes for increased performance.
Implementation Method 1
forming a conductive buffer layer along sidewalls of the first gate electrode and the second gate electrode and on upper surfaces of the first gate electrode and second gate electrode
Implementation Method 2
forming a conductive buffer layer along sidewalls of the first gate electrode and the second gate electrode and on upper surfaces of the first gate electrode and second gate electrode
Implementation Method 3
forming a first impurity region in the substrate at sides of the second gate electrode using the first mask pattern as a mask of an ion implantation process
Data Source
AI summary
In a method for fabricating a semiconductor device, a first gate electrode and a second gate electrode are provided on a substrate, the first gate electrode and the second gate electrode being formed in a first region and a second region of the substrate, respectively. A conductive buffer layer is formed along sidewalls of the first gate electrode and the second gate electrode and on upper surfaces of the first gate electrode and second gate electrode. A first mask pattern covering the first region of the substrate on the buffer layer is formed. A first impurity region is formed in the substrate at sides of the second gate electrode using the first mask pattern as a mask of an ion implantation process.