Concurrent Gate and Capacitor Fabrication in Semiconductor Devices
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Solution Overview
Problem
The complexity and cost of fabricating semiconductor devices increase with the scaling down of dimensions, making it challenging to achieve improved quality, yield, performance, and reliability while maintaining reduced complexity.
Innovation Solution
A semiconductor device design where the gate and capacitor structures are concurrently formed with matching thickness and materials, allowing for simplified fabrication by sharing common layers and processes, thereby reducing the overall complexity of the manufacturing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If gate and capacitor structures are fabricated separately with different processes, then each structure can be optimized independently, but the overall manufacturing complexity increases
Solution Approach 1:
The patent merges the fabrication processes for gate and capacitor structures by making them concurrent. The method combines previously separate deposition and etching processes into unified concurrent operations, reducing the total number of process steps while maintaining the ability to optimize both structures independently through process parameter control
Solution Approach 2:
The patent implements universality by designing deposition and etching processes that serve dual purposes. The deposition process simultaneously forms both gate and capacitor structures, and the etching process concurrently patterns both structures, allowing a single process to fulfill multiple fabrication functions
2Reliability
If more process steps are used to ensure quality and yield, then manufacturing precision improves, but fabrication complexity increases
Solution Approach 1:
By merging deposition and etching processes into concurrent operations, the patent reduces the total number of process steps required. This consolidation maintains quality and yield through carefully controlled process parameters while eliminating redundant sequential steps that would otherwise increase fabrication complexity
Solution Approach 2:
The patent ensures continuous useful action by making deposition and etching processes concurrent rather than sequential. Both structures are formed and patterned simultaneously in overlapping time periods, maximizing process efficiency and reducing total fabrication time without compromising quality or yield
Data Source
AI summary
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a gate structure comprising a gate bottom insulating layer inwardly positioned, a gate top insulating layer positioned on the gate bottom insulating layer, a gate top conductive layer positioned on the gate top insulating layer, and a gate filler layer positioned on the gate top conductive layer; and a capacitor structure comprising a capacitor bottom insulating layer inwardly positioned, a capacitor bottom conductive layer positioned on the capacitor bottom insulating layer, a capacitor top insulating layer positioned on the capacitor bottom conductive layer, a capacitor top conductive layer positioned on the capacitor top insulating layer, and a capacitor filler layer positioned on the capacitor top conductive layer. The gate bottom insulating layer is formed of a same material as the capacitor bottom insulating layer.