Semiconductor Gate Control via Direct Transistor Path
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Solution Overview
Problem
Semiconductor devices face challenges in controlling the potential of gate electrodes efficiently, leading to increased power consumption and self-turn-on phenomena due to resistance effects in gate interconnects, which complicates switching speed adjustment and external control.
Innovation Solution
Incorporating a first control transistor part with a control gate electrode and drain electrode connected to both gate electrodes, allowing direct potential control without going through the gate interconnect, thereby reducing delay and power loss.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If gate electrodes are controlled through gate interconnects, then device structure is simplified, but delay increases and power consumption increases due to resistance effects
Solution Approach 1:
The gate control function is segmented into two paths: a direct control path from the control electrode to the gate electrode, and an indirect path through the gate interconnect. This segmentation allows the critical control signal to bypass the resistive interconnect, reducing delay while maintaining structural simplicity for non-critical connections.
Solution Approach 2:
A control electrode is introduced as an intermediary element that directly controls the gate electrode potential. This intermediary bypasses the gate interconnect for the control signal path, eliminating the delay and power loss caused by interconnect resistance while keeping the interconnect structure for power distribution.
2Device complexity
If gate electrodes are controlled through gate interconnects, then wiring is simplified, but power consumption increases due to resistance effects
Solution Approach 1:
The power delivery and control signal paths are segmented into separate routes. The gate interconnect handles DC power distribution with minimal current, while the control electrode handles dynamic control signals, separating the high-power path from the low-power control path to reduce I²R losses.
Solution Approach 2:
The control electrode serves as a mediator that delivers control signals directly to the gate electrode without passing through the resistive gate interconnect. This intermediary path eliminates the power loss that would occur if control signals traversed the high-resistance interconnect.
3Device complexity
If gate electrode potential is not directly controlled, then control structure is simpler, but self-turn-on phenomena occur
Solution Approach 1:
The control electrode acts as a dedicated intermediary that directly regulates the gate electrode potential, preventing unwanted self-turn-on phenomena. This intermediary provides precise control by isolating the gate electrode from potential fluctuations in the gate interconnect and power supply.
Solution Approach 2:
Direct control of the gate electrode potential is implemented at the local level where it is most needed, rather than relying on global interconnect control. This local quality approach ensures that each gate electrode can be independently and precisely controlled, preventing self-turn-on while maintaining overall system simplicity.
Data Source
AI summary
According to one embodiment, a semiconductor device includes a semiconductor member, a first gate electrode, a second gate electrode, a first control transistor part, a gate interconnect, and a control gate interconnect. The semiconductor member includes first and second semiconductor layers. The semiconductor member includes first and second regions, and a first control region. The first and second gate electrodes extend along a first direction. A direction from the first region toward at least a portion of the first gate electrode is along a second direction crossing the first direction. The first control transistor part includes a first control gate electrode and a first control drain electrode. The first control drain electrode is electrically connected to the first and second gate electrodes. The gate interconnect is electrically connected to the first and second gate electrodes. The control gate interconnect is electrically connected to the first control gate electrode.