Semiconductor Gate-Cut Layout for Dense Logic Cell Isolation
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Solution Overview
Problem
There is a need for semiconductor devices with increased integration density and improved electric characteristics to meet the demands of the advancing electronic industry for high reliability and multifunctionality.
Innovation Solution
A semiconductor device design featuring a substrate with multiple active regions, gate electrodes, and metal layers, including gate cutting patterns that cover the outermost side surfaces of channel patterns, along with active and gate contacts, to enhance integration density and electric performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If integration density is increased, then chip area is reduced, but device complexity increases
Solution Approach 1:
The gate electrode is divided into multiple segments by introducing gate cutting patterns between adjacent logic cells. This segmentation allows independent control of gate electrodes in different cells, enabling higher integration density while maintaining manageable device complexity through modular architecture.
Solution Approach 2:
The gate cutting patterns are positioned at different vertical levels (below power lines vs. between active patterns) to achieve spatial separation. This multi-dimensional arrangement allows increased integration density by utilizing three-dimensional space efficiently while reducing the complexity of planar routing.
2Reliability
If gate cutting patterns are introduced to prevent punch-through, then electric characteristics are improved, but manufacturing complexity increases
Solution Approach 1:
The gate cutting patterns are combined with the device isolation layer structure, where the gate cutting patterns are formed within or integrated with the isolation regions. This merging reduces the number of separate fabrication steps while achieving both punch-through prevention and proper electrical isolation.
Solution Approach 2:
The gate cutting patterns serve as intermediary structures that provide both electrical isolation (preventing punch-through) and structural support. By positioning these patterns at strategic locations, they mediate between the need for electrical performance and manufacturing simplicity.
3Area of stationary object
If gate electrode length is reduced to increase integration density, then chip area decreases, but risk of short circuits increases
Solution Approach 1:
By segmenting the gate electrode into multiple sections separated by gate cutting patterns, the overall gate length is effectively reduced for integration density purposes while each segment maintains adequate spacing to prevent short circuits. The segmentation creates natural isolation points that reduce short circuit risk.
Solution Approach 2:
The gate cutting patterns act as intermediary isolation structures between adjacent gate electrode segments. These intermediaries provide the necessary electrical separation to prevent short circuits while allowing the gate electrodes to be positioned closer together for increased integration density.
Data Source
AI summary
A semiconductor device includes first and second active patterns respectively on the first and second active regions of a substrate, a gate electrode on the first and second channel patterns, active contacts electrically connected to at least one of the first and second source/drain patterns, a gate contact electrically connected to the gate electrode, a first metal layer on the active and gate contacts and including a first and second power line, and first and second gate cutting patterns below the first and second power lines. The first active pattern may include first channel pattern between a pair of first source/drain patterns. The second active pattern may include a second channel pattern between a pair of second source/drain patterns. The first and second gate cutting patterns may cover the outermost side surfaces of the first and second channel patterns, respectively.