Semiconductor Gate Structures with Variable Depth for Multi-Threshold Control
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Solution Overview
Problem
The challenge in semiconductor device manufacturing lies in achieving improved quality, yield, performance, and reliability while scaling down device dimensions, which is complicated by the need for reduced complexity and varied threshold voltages for different gate structures.
Innovation Solution
A semiconductor device design featuring multiple threshold voltages is achieved by creating first and second gate structures with different depths and threshold voltages, utilizing specific dielectric and electrode layers, and isolation structures, allowing for distinct functions and increased applicability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multiple gate structures with different depths are created to achieve different threshold voltages, then the functionality and applicability of the semiconductor device are enhanced, but the device complexity and manufacturing process complexity increase
Solution Approach 1:
The semiconductor device is segmented into multiple gate structures (first gate structure with first depth, second gate structure with second depth) that can be independently configured with different threshold voltages. Each gate structure serves specific functional requirements, allowing the device to handle different applications simultaneously within a single substrate.
Solution Approach 2:
The patent introduces depth as an additional dimensional variable for gate structure configuration. By varying the depth of gate structures in the vertical dimension while maintaining planar substrate integration, the device achieves different threshold voltages without increasing lateral footprint, thus enhancing functionality while controlling complexity.
2Adaptability or versatility
If multiple gate structures with different depths are created to achieve different threshold voltages, then the functionality and applicability of the semiconductor device are enhanced, but the manufacturing process complexity increases
Solution Approach 1:
The patent employs preliminary patterning and depth definition steps during fabrication where trenches of different depths are pre-formed in the substrate before gate electrode deposition. This preliminary action establishes the depth differentiation early in the manufacturing process, allowing subsequent gate structures to be formed using standardized processes, thereby reducing overall process complexity.
Solution Approach 2:
The manufacturing process utilizes parameter changes in the form of selective etching depths and varying gate dielectric layer thicknesses to create different threshold voltages. By controlling physical parameters (depth, thickness, material composition) rather than adding complex process steps, the patent achieves multi-threshold functionality with manageable manufacturing complexity.
Data Source
AI summary
The present application discloses a semiconductor device with multiple threshold voltages and a method for fabricating the semiconductor device with the multiple threshold voltages. The semiconductor device includes a substrate, a first gate structure positioned in the substrate and having a first depth and a first threshold voltage, and a second gate structure positioned in the substrate and having a second depth and a second threshold voltage. The first depth is greater than the second depth, and the first threshold voltage is different from the second threshold voltage.