Semiconductor Gate with Dielectric Fill for Field Distribution
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Solution Overview
Problem
Existing methods for forming gate electrodes in high voltage transistors lead to undesired current-voltage relationships, causing operational instability due to uneven electric field distribution and resulting in a 'double hump' effect in current-voltage curves.
Innovation Solution
A semiconductor device fabrication method that includes forming a gate electrode with openings filled with a dielectric material, which helps to distribute electric fields more evenly, delaying the turn-on of edge region transistors and smoothing the current-voltage curve by ensuring similar channel current behavior across different regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If existing methods of forming gate electrode are used, then manufacturing process is simple, but current-voltage relationship becomes unstable with double hump effect
Solution Approach 1:
The patent applies local quality by introducing dielectric material specifically at the edge regions of the gate electrode, where electric field concentration problems occur. This localized modification creates different functional zones within the gate structure: the dielectric-filled edge regions provide electric field modulation, while the central region maintains standard conductivity, thereby stabilizing the current-voltage relationship without requiring complete structural redesign
Solution Approach 2:
The dielectric material serves as an intermediary element between the gate electrode and the channel region. It mediates the electric field distribution by providing a controlled dielectric barrier at the edges, which prevents excessive field concentration and the resulting double hump effect, while still allowing the gate to control channel current through the central region
2Stability of the object's composition
If gate electrode is formed with dielectric material filling, then electric field distribution becomes uniform, but manufacturing process complexity increases
Solution Approach 1:
The gate electrode fabrication is segmented into distinct stages: first forming the gate electrode structure, then selectively filling the edge regions with dielectric material. This segmentation allows each step to be optimized independently, using standard semiconductor fabrication techniques for gate formation and adding the dielectric filling as a separate, controlled process step
Solution Approach 2:
The patent utilizes parameter changes in the dielectric material properties (such as dielectric constant and thickness) to control electric field distribution. By adjusting these parameters, the electric field uniformity can be optimized for different device requirements, providing flexibility in managing the trade-off between field uniformity and manufacturing complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method alleviates the 'double hump' effect, stabilizing transistor operation by ensuring a more uniform current-voltage relationship, approaching the desired smooth curve and improving the reliability of high voltage transistors.
Implementation Method 1
distribute electric fields more evenly, delaying the turn-on of edge region transistors
Data Source
AI summary
The present disclosure provides an apparatus and method for fabricating a semiconductor gate. The apparatus includes, a substrate having an active region and a dielectric region that forms an interface with the active region; a gate electrode located above a portion of the active region and a portion of the dielectric region; and a dielectric material disposed within the gate electrode, the dielectric material being disposed near the interface between the active region and the dielectric region. The method includes, providing a substrate having an active region and a dielectric region that forms an interface with the active region; forming a gate electrode over the substrate, the gate electrode having an opening near a region of the gate electrode that is above the interface; and filling the opening with a dielectric material.