Semiconductor Gate Dielectric Thermal Treatment
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Solution Overview
Problem
The reliability of gate dielectric layers in semiconductor devices is compromised due to time-dependent dielectric breakdown, which affects the overall performance and characteristics of transistors as design rules become more stringent and gate dielectric thicknesses are reduced.
Innovation Solution
A method involving thermal treatment processes using oxygen, nitrogen, argon, or ultraviolet radiation in-situ is employed before and after forming the initial oxide layer on the channel region of transistors, specifically at temperatures between 550° C. to 750° C., to improve the reliability of the gate dielectric layer by removing hydroxyl groups and enhancing the integrity of the oxide layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If gate dielectric layer thickness is reduced to improve current driving ability, then transistor performance is improved, but time dependent dielectric breakdown reliability deteriorates
Solution Approach 1:
A thermal treatment process is performed before forming the initial oxide layer to modify the channel region surface. This preliminary action removes hydroxyl groups and prepares the surface in advance, ensuring better oxide layer quality even at reduced thickness, thereby maintaining reliability while enabling improved current driving ability
Solution Approach 2:
The thermal treatment process converts the potentially harmful hydroxyl groups on the channel region surface into beneficial clean surfaces. By removing these hydroxyl groups through thermal treatment with oxygen, nitrogen, argon, or UV radiation, the subsequent oxide layer formation is improved, enhancing gate dielectric reliability at thinner dimensions
2Reliability
If thermal treatment process is performed to improve oxide layer integrity, then gate dielectric reliability is improved, but process complexity increases
Solution Approach 1:
The thermal treatment process is merged with the existing oxide formation process by performing it in-situ in the same process chamber. This combination eliminates the need for separate process equipment and reduces overall process complexity while still achieving improved oxide layer integrity and gate dielectric reliability
Solution Approach 2:
The process chamber is used for multiple purposes: both for the thermal treatment process and for subsequent oxide formation. This multi-functionality reduces equipment requirements and simplifies the manufacturing process while maintaining improved gate dielectric reliability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the reliability of the semiconductor device by preventing deterioration of the initial oxide layer and enhancing the characteristics of the gate dielectric layer, thereby improving the transistor's performance and longevity.
Implementation Method 1
performing a thermal treatment process at least once before or after forming the initial oxide layer
Implementation Method 2
performing a thermal treatment process using at least one of oxygen, nitrogen, argon, or ultraviolet (UV) radiation in-situ in a process chamber
Implementation Method 3
forming an initial oxide layer on the channel region
Data Source
AI summary
The inventive concepts provide methods of manufacturing a semiconductor device including a thermal treatment process. The method may include providing a substrate including a channel region of a transistor, forming an initial oxide layer on the channel region, and performing a thermal treatment process at least once before or after forming the initial oxide layer.