Semiconductor Gate Electrode with Etch-Selective Barrier Patterns
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Solution Overview
Problem
The process of replacing nitride layers with conductive layers in 3-dimensional nonvolatile memory devices is challenging, as reactive gases can damage surrounding layers, degrading the memory device characteristics.
Innovation Solution
A semiconductor device structure and manufacturing method involving conductive layers with specific barrier patterns and material patterns, allowing for etch selectivity, and the use of insulating layers alternately stacked with conductive layers, which helps in forming a gate electrode with a dielectric layer between the channel layer and the gate electrode, preventing damage from reactive gases.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If nitride layers are replaced with conductive layers in the manufacturing process, then the gate electrode structure is formed, but reactive gases damage surrounding layers degrading device characteristics
Solution Approach 1:
An intermediate layer is introduced between the nitride layer and the conductive layer. This intermediate layer serves as a protective barrier that prevents reactive gases from the conductive layer deposition process from damaging the surrounding oxide layers and nitride layers, while still allowing the gate electrode structure to be formed. The intermediate layer is selectively removed later in the process.
Solution Approach 2:
The intermediate layer is formed in advance before the conductive layer is deposited. This preliminary action prepares the structure to withstand the harmful effects of reactive gases during subsequent deposition processes, protecting the surrounding layers before damage can occur.
2Device complexity
If the process of replacing nitride layers with conductive layers is performed, then the gate electrode is formed, but the surrounding layers are damaged by remaining reactive gases
Solution Approach 1:
The intermediate layer acts as a mediator that shields the surrounding oxide and nitride layers from the harmful reactive gases released during conductive layer deposition. This protective barrier allows the complex gate electrode structure to be formed without compromising the integrity of adjacent layers.
Solution Approach 2:
The intermediate layer provides beforehand cushioning or protection to the surrounding layers against the harmful effects of reactive gases. By placing this protective layer in advance, the structure is cushioned against damage before the deposition process begins.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the characteristics of the memory device by simplifying the manufacturing process and preventing damage to surrounding layers, thereby improving the device's performance and integration.
Implementation Method 1
a material pattern, which is formed in the first barrier pattern and has an etch selectivity with respect to the first barrier pattern
Data Source
AI summary
A semiconductor device including a central region, side regions located in both sides of the central region, and conductive layers including a first barrier pattern formed in the central region, a material pattern formed in the first barrier pattern and having an etch selectivity with respect to the first barrier pattern, and a second barrier pattern formed in the material pattern; and insulating layers alternately stacked with the conductive layers.