Semiconductor Gate Fingers with Inductive Terminal Circuit
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Solution Overview
Problem
Conventional FETs experience voltage distribution issues due to signal wavelength, leading to reduced performance as certain cell portions may not operate effectively.
Innovation Solution
A semiconductor device configuration with gate fingers sandwiched between source and drain fingers, incorporating terminal circuits with inductive impedance at signal frequencies, connected away from the input terminal to ensure uniform voltage distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional FET configuration with alternating source and drain fingers is used, then device structure is simple and manufacturable, but voltage distribution becomes non-uniform due to signal wavelength effects
Solution Approach 1:
An inductive impedance element is introduced as an intermediary component connected to the gate finger. This inductor acts as a mediator that compensates for the non-uniform voltage distribution caused by wavelength effects, thereby improving voltage uniformity without changing the basic alternating finger structure that ensures ease of manufacture
Solution Approach 2:
The invention changes the electrical parameter (impedance characteristic) by introducing an inductive element with specific inductance value. This parameter change compensates for the capacitive effects and wavelength-induced non-uniformity, improving voltage distribution while maintaining the original simple structure
2Power
If gate finger length is increased to improve device performance, then power handling capability increases, but voltage non-uniformity due to wavelength effects becomes more severe
Solution Approach 1:
The invention converts the harmful wavelength effect into a beneficial outcome by introducing an inductive impedance that resonates with the inherent capacitance. This resonance effect compensates for the voltage non-uniformity, allowing longer gate fingers to be used for higher power handling while maintaining voltage uniformity
3Manufacturing precision
If terminal circuit with inductive impedance is added to uniformize voltage, then voltage distribution uniformity improves, but device complexity increases
Solution Approach 1:
The inductive impedance is implemented as a separate terminal circuit that can be independently designed and connected to the gate finger. This segmentation allows the voltage uniformization function to be added without fundamentally changing the main FET structure, thereby limiting the increase in overall device complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration achieves uniform voltage distribution within the semiconductor device, enhancing performance, particularly in high-frequency regions by improving gain and reducing input admittance.
Implementation Method 1
one or more terminal circuits each having inductive impedance at the frequency of a signal input to an input terminal of the one or more gate fingers
Data Source
AI summary
A semiconductor device is provided with one or more gate fingers (20) that are provided in an active region on a semiconductor substrate (1), and a source finger (30) and a drain finger (40) that are provided in the active region and arranged alternately to allow each gate finger to be sandwiched between the source and drain fingers. The semiconductor device includes terminal circuit (60) that has inductive impedance at the frequency of a signal input to an input terminal of the one or more gate fingers, and is directly or indirectly connected to the one or more gate fingers at an area being spaced away from a connecting position of the input terminal (21a) of the one or more gate fingers (20).