Semiconductor Gate Structure With Insulating Enclosure
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Solution Overview
Problem
The increasing demand for higher integration density and performance in semiconductor devices poses challenges in fabricating devices with reduced process margins, particularly in photolithography processes, which can lead to difficulties in achieving improved electric characteristics.
Innovation Solution
A semiconductor device design featuring active patterns spaced apart with an insulating structure between them, a device isolation layer, and a gate structure that extends in a crossing direction, including an upper and lower portion enclosed by the insulating structure, along with a bit line connected to the impurity region and contacts to the second impurity regions, is proposed. The fabrication method involves forming device isolation layers, recesses, and insulating structures to create these features.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the process margin is reduced to achieve higher integration density, then integration density is improved, but manufacturing precision deteriorates
Solution Approach 1:
The gate structure is divided into an upper gate electrode and a lower gate electrode separated by an insulating structure. This segmentation allows each gate electrode to be formed with appropriate process margins while achieving high integration density through the stacked configuration. The insulating structure between the gates enables independent formation and control, resolving the conflict between density and precision.
Solution Approach 2:
The patent transitions from a planar gate structure to a three-dimensional stacked gate structure with upper and lower portions. This dimensional change allows increased integration density vertically while maintaining horizontal process margins. The gate structure extends in a second direction crossing the first direction, creating a multi-dimensional layout that resolves the density-precision contradiction.
2Quantity of substance
If active patterns are spaced closer to increase integration density, then integration density is improved, but electric characteristics deteriorate
Solution Approach 1:
An insulating structure is introduced as an intermediary between adjacent active patterns and between the upper and lower gate electrodes. This insulating structure prevents electrical interference and maintains proper electric characteristics while allowing closer spacing of active patterns for higher integration density. The intermediary insulating layer resolves the conflict by providing electrical isolation.
Solution Approach 2:
The lower gate electrode is enclosed by the insulating structure, creating a nested configuration where the insulating structure surrounds portions of the gate structure. This nesting provides electrical isolation and protection while maintaining compact dimensions for high integration density, resolving the density-electric characteristics contradiction.
Data Source
AI summary
A semiconductor device may include active patterns extended in a first direction and spaced apart from each other in the first direction, a device isolation layer defining the active patterns, an insulating structure provided between the active patterns and between the device isolation layer, and a gate structure disposed on the insulating structure and extended in a second direction crossing the first direction. The gate structure may include an upper portion and a lower portion. The lower portion of the gate structure may be enclosed by the insulating structure.