Semiconductor Gate Insulating Layer Peak Structure
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Solution Overview
Problem
The challenge in semiconductor device manufacturing lies in scaling down dimensions while maintaining quality, yield, performance, and reliability, as well as reducing complexity, which is exacerbated by issues during the down-scaling process.
Innovation Solution
The semiconductor device design includes a substrate with a peak portion, a gate insulating layer, a gate bottom conductive layer, and doped regions, along with specific structural features such as gate spacers and isolation structures, which allow for controlled programming and increased carrier mobility by limiting the rupture point of the gate insulating layer adjacent to the vertex of the peak portion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If the dimensions of semiconductor devices are scaled down, then computing ability is improved, but manufacturing precision and reliability deteriorate due to various issues arising during the down-scaling process
Solution Approach 1:
The gate insulating layer is formed with a pre-defined peak portion and controlled thickness distribution before the actual device operation. The thickness varies intentionally from a first thickness at the peak to a second thickness at the edges, preparing the structure in advance to control rupture points during programming and improve manufacturing precision at scaled dimensions
Solution Approach 2:
The gate insulating layer is designed with non-uniform thickness distribution, where different regions have different thicknesses. The peak portion has a first thickness while edge portions have a second thickness, creating local variations that control where rupture points form during programming, thereby improving reliability in scaled-down devices
2Power
If the dimensions of semiconductor devices are scaled down, then computing ability is improved, but device complexity increases due to various issues arising during the down-scaling process
Solution Approach 1:
The peak portion and thickness distribution are established during the formation of the gate insulating layer itself, rather than requiring additional complex structures or processes later. This preliminary configuration simplifies the overall device structure while maintaining the ability to control rupture points in scaled-down devices
3Length of moving object
If the gate insulating layer thickness is reduced, then device scaling is improved, but programming reliability deteriorates due to difficulty in controlling rupture points
Solution Approach 1:
The gate insulating layer is designed with spatially varying thickness, where the peak portion maintains a sufficient first thickness to ensure reliable rupture point control, while edge portions have a reduced second thickness. This local differentiation allows the device to be scaled down overall while maintaining programming reliability at the critical peak region
Solution Approach 2:
The thickness distribution is pre-configured during layer formation to ensure that rupture points occur at predictable locations adjacent to the peak portion vertex. This preliminary structuring enables reliable programming even as overall dimensions are reduced
Data Source
AI summary
The present application discloses a method for fabricating a semiconductor device. The method includes providing a substrate, forming a peak portion on the substrate, forming a gate insulating layer on the substrate and the peak portion, forming a gate bottom conductive layer on the gate insulating layer, and forming a first doped region in the substrate and adjacent to one end of the gate insulating layer.