Semiconductor Gate Insulation Film Segmentation for On-Resistance Reduction
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Solution Overview
Problem
The existing methods for forming a semiconductor device with a thin film compound semiconductor transistor face limitations in reducing on-resistance due to the thickness requirements of diffusion prevention films used as gate insulation films.
Innovation Solution
The semiconductor device incorporates a gate insulation film that is thinner than the diffusion prevention film, formed in an identical layer but with a different material, to reduce on-resistance without compromising the diffusion prevention function, and a manufacturing method involving specific steps for forming these layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a diffusion prevention film is used as a gate insulation film to maintain diffusion prevention function, then the thickness of the gate insulation film must be sufficient, but this increases the on resistance of the semiconductor element
Solution Approach 1:
The gate insulation film is segmented into two distinct layers: a first insulation layer (diffusion prevention film) that prevents dopant diffusion and maintains reliability, and a second insulation layer (gate insulation film) that is thinner and reduces on-resistance. This segmentation allows each layer to perform its specific function optimally without compromising the other.
Solution Approach 2:
Different regions of the gate insulation structure have different thicknesses and material properties. The first insulation layer has sufficient thickness for diffusion prevention, while the second insulation layer is thinner to reduce capacitance and on-resistance. This local differentiation of quality allows simultaneous optimization of both reliability and electrical performance.
2Object-affected harmful factors
If the gate insulation film is made thinner to reduce on resistance, then the electrical performance improves, but the diffusion prevention function may be compromised
Solution Approach 1:
The gate insulation film is segmented into two distinct layers: a first insulation layer (diffusion prevention film) that prevents dopant diffusion and maintains reliability, and a second insulation layer (gate insulation film) that is thinner and reduces on-resistance. This segmentation allows each layer to perform its specific function optimally without compromising the other.
Solution Approach 2:
The first insulation layer serves dual purposes: it acts as both the diffusion prevention film and part of the gate insulation film. This multi-functionality allows the structure to maintain diffusion prevention capability while enabling a thinner overall gate insulation structure that reduces on-resistance.
Data Source
AI summary
The present invention makes it possible to lower the on resistance of a semiconductor element without hindering the function of a diffusion prevention film in a semiconductor device having the semiconductor element that uses a wire in a wiring layer as a gate electrode and has a gate insulation film in an identical layer to the diffusion prevention film. A first wire and a gate electrode are embedded into the surface layer of an insulation layer comprising a first wiring layer. A diffusion prevention film is formed between the first wiring layer and a second wiring layer. A gate insulation film is formed by: forming a recess over the upper face of the diffusion prevention film in the region overlapping with the gate electrode and around the region; and thinning the part.