Semiconductor Gate Insulator with Local Dielectric Variation
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Solution Overview
Problem
Semiconductor devices face challenges in reducing capacitive coupling between the gate and source/drain, which affects their performance and efficiency due to the high operating speeds required in modern electronic technology.
Innovation Solution
The semiconductor device incorporates a design with different dielectric constants for insulators on the gate patterns and includes air gaps to minimize capacitive coupling, using high-k gate insulation films and strategically placing insulators and contacts to optimize dielectric constants and reduce coupling.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If conventional insulator structures are used on gate patterns, then manufacturing is simpler, but capacitive coupling between gate and source/drain increases
Solution Approach 1:
The patent applies different dielectric constant materials to different spatial locations: low-k material in the first region (peripheral region) and high-k material in the second region (cell region). This local differentiation optimizes capacitive coupling reduction in the peripheral region while maintaining performance in the cell region, directly resolving the contradiction between reducing harmful capacitive coupling and avoiding unnecessary complexity throughout the entire device.
Solution Approach 2:
The insulator structure is segmented into multiple regions with different dielectric properties. The first insulator pattern in the peripheral region uses low-k material, while the second insulator pattern in the cell region uses high-k material. This segmentation allows each region to be optimized independently for its specific functional requirements, reducing overall capacitive coupling without uniformly increasing device complexity.
2Reliability
If high-k gate insulation films are used, then gate control is improved, but capacitive coupling with source/drain increases
Solution Approach 1:
The patent strategically places high-k gate insulation films only in the cell region where they are most beneficial for transistor performance, while using low-k insulator materials in the peripheral region to minimize capacitive coupling. This local quality differentiation allows the system to achieve good gate control where needed without suffering from excessive capacitive coupling elsewhere.
Solution Approach 2:
The low-k insulator material acts as an intermediary between the high-k gate insulation film and the source/drain in the peripheral region. This intermediary layer reduces the direct capacitive interaction between the gate and source/drain structures, allowing high-k materials to be used for improved gate control while mitigating their harmful capacitive coupling effects through the mediating low-k material.
3Object-affected harmful factors
If uniform insulator height is used, then manufacturing is easier, but capacitive coupling reduction is insufficient
Solution Approach 1:
The patent implements different insulator heights in different regions: the first insulator pattern in the peripheral region has a greater height than the second insulator pattern in the cell region. This local quality differentiation allows the peripheral region to achieve better capacitive coupling reduction through taller low-k insulators, while the cell region maintains appropriate insulation with shorter high-k insulators, optimizing both performance and manufacturability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design effectively reduces capacitive coupling, enhancing the performance and efficiency of semiconductor devices by optimizing the dielectric constants and structure of the insulators and contacts, thereby improving operational speed and accuracy.
Implementation Method 1
reduce a capacitive coupling phenomenon between a gate and a source and/or drain
Implementation Method 2
The first gate pattern includes a first high-k gate insulation film
Data Source
AI summary
A semiconductor device including: a first gate pattern disposed in a peripheral region of a substrate; a second gate pattern disposed in a cell region of the substrate; a first insulator formed on sidewalls of the first gate pattern; and a second insulator formed on sidewalls of the second gate pattern, wherein a dielectric constant of the first insulator is different from a dielectric constant of the second insulator, and wherein a height of the second insulator is greater than a height of the second gate pattern.