Semiconductor Gate Insulator with Tilted Edge Thickness
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving optimal insulative characteristics, particularly at the end portions of gate electrodes, which affect insulation reliability and electric field distribution.
Innovation Solution
The semiconductor device incorporates a first insulating portion with varying thickness and tilt angles between electrode regions and semiconductor layers, along with a manufacturing method involving trench formation and etch-back processes to create a conductive layer and insulating films, ensuring enhanced insulative characteristics by adjusting the width and depth of trenches and insulating films.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional insulating structure with uniform thickness is used, then the manufacturing process is simple, but the insulative characteristics at electrode end portions are insufficient
Solution Approach 1:
The insulating film is designed with non-uniform thickness, where the thickness at the end portions of the gate electrode is greater than at the central portion. This local variation in thickness provides enhanced insulation where needed (at the edges) while maintaining adequate insulation elsewhere, resolving the contradiction between uniform simplicity and localized performance requirements
Solution Approach 2:
The patent transitions from a two-dimensional planar insulating structure to a three-dimensional stepped or graded thickness structure. By introducing vertical dimensionality variation in the insulating film thickness, the patent achieves improved electric field distribution and insulation reliability without requiring complex multi-layer stacking
2Reliability
If the insulating film thickness is increased uniformly, then insulation reliability improves, but electric field distribution becomes non-optimal and device performance decreases
Solution Approach 1:
Rather than uniformly increasing insulating film thickness throughout, the patent applies increased thickness specifically at the end portions of the gate electrode where electric field concentration occurs. This localized approach improves insulation reliability at critical points while maintaining optimal electric field distribution and device performance in the active regions
Solution Approach 2:
The patent varies the thickness parameter of the insulating film across different spatial locations. By changing the thickness parameter from uniform to gradient-based or stepped values, the patent optimizes both insulation reliability and electric field distribution, achieving improved device performance rather than degraded performance
3Reliability
If the insulating structure is optimized for end portions, then insulative characteristics improve, but manufacturing complexity increases
Solution Approach 1:
The manufacturing process is segmented into distinct stages: forming the gate electrode structure, depositing the insulating film, and selectively removing portions of the insulating film or gate electrode to create the desired non-uniform thickness profile. This segmentation allows complex geometric outcomes to be achieved through a series of relatively simple, well-established semiconductor manufacturing steps
Solution Approach 2:
The insulating film is deposited over the entire gate electrode structure first, including the end portions, before any selective removal or modification. This preliminary action ensures complete coverage and uniform initial thickness, after which selective thinning or patterning creates the desired non-uniform profile, simplifying the overall manufacturing approach
Data Source
AI summary
According to one embodiment, a semiconductor device includes a first electrode, a semiconductor layer, and a first insulating portion. The first electrode includes first and second electrode regions. The semiconductor layer includes first to third semiconductor regions, and third and fourth partial regions. The first semiconductor region includes first and second partial regions. The first partial region is separated from the first electrode region. The second semiconductor region is separated from the second partial region. The third semiconductor region is provided between the second partial region and the second semiconductor region. The third partial region is separated from the second electrode region. The fourth partial region is separated from the second electrode region. The first insulating portion is provided between the electrode region and the partial region and between the electrode region and the semiconductor region. The first insulating portion has a first width and a second width.