Semiconductor Gate Electrode Isolation via Separation Pattern
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Solution Overview
Problem
As semiconductor devices are scaled down, their operating characteristics deteriorate due to increased integration, leading to reliability and electrical property degradation, particularly due to the connection of neighboring gate electrodes which can cause malfunction.
Innovation Solution
Incorporating a separation pattern between the gate electrode and the dummy gate electrode adjacent to the trench, which prevents connection of neighboring gate electrodes even when the source/drain recess has an insufficient thickness, thereby maintaining electrical properties and preventing malfunction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the source/drain recess thickness is reduced to scale down the device, then the device size decreases and integration increases, but the gate electrodes may connect improperly causing malfunction
Solution Approach 1:
The separation pattern is introduced as an intermediary element between adjacent gate electrodes. This dielectric pattern prevents direct connection of gate electrodes through the recess, ensuring proper electrical isolation is maintained even when the recess thickness is reduced for device scaling.
2Ease of manufacture
If the recess thickness is insufficient, then manufacturing becomes easier with fewer process steps, but gate electrode connection cannot be properly prevented
Solution Approach 1:
The separation pattern is formed in advance during the gate electrode formation process, before the gate electrodes are fully deposited. This preliminary action ensures that the dielectric barrier is already in place to prevent gate electrode connection, eliminating the need for additional isolation process steps.
3Productivity
If the device is scaled down with reduced recess thickness, then integration density increases, but electrical properties deteriorate due to gate electrode connection
Solution Approach 1:
The separation pattern serves as a dielectric intermediary that maintains electrical isolation between gate electrodes. This allows the device to be scaled down with reduced recess thickness while preserving proper electrical properties and preventing gate electrode connection that would cause malfunction.
Data Source
AI summary
Disclosed is a semiconductor device including: a substrate including a first active pattern separated into a pair of first active patterns by a trench; a device isolation layer filling the trench; first source/drain patterns on the first active pattern; a first channel pattern connected to the first source/drain patterns and including semiconductor patterns; a first dummy gate electrode that extends while being adjacent to a first sidewall of the trench; a gate electrode that is spaced apart in the first direction from the first dummy gate electrode and extends while running across the first channel pattern, a gate capping pattern on the gate electrode; a gate contact coupled to the gate electrode; and a separation pattern extending between the gate electrode and the first dummy gate electrode. A top surface of the separation pattern is at a same level as that of the gate capping pattern.