Semiconductor Gate Layout for Isolation Without Active Region Disconnection
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Solution Overview
Problem
Device packing density and performance are compromised in semiconductor devices due to device layout and isolation issues, particularly when isolation dummy gates disconnect active regions, affecting carrier mobility and device performance.
Innovation Solution
The layout of semiconductor devices is optimized by adjusting the length of active regions in P-type and N-type FETs using isolation dummy gates to enhance carrier mobility and device performance, with features like connect features and extended active regions across multiple cells.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If isolation dummy gates are used to prevent leakage between neighboring devices, then device isolation and reliability are improved, but active regions are disconnected and device performance deteriorates
Solution Approach 1:
The gate structure is segmented into functional gates and isolation dummy gates. The isolation dummy gates are selectively positioned only at cell edges where leakage prevention is needed, while internal gates remain continuous to maintain active region connectivity. This segmentation allows the system to achieve both isolation and connectivity requirements in different spatial locations.
Solution Approach 2:
The gate structure exhibits local quality by having different configurations in different regions: at cell edges, isolation dummy gates are present to prevent leakage, while in internal regions, continuous gates maintain active region connectivity. The method selectively applies isolation structures only where needed rather than uniformly across the entire device array.
2Productivity
If device packing density is increased through scaling, then productivity is improved, but device layout complexity and isolation issues worsen
Solution Approach 1:
The method performs preliminary action by pre-defining gate structure configurations for different cell positions (edge vs. internal) before device fabrication. The isolation dummy gate placement is determined in advance based on cell location, allowing automated layout generation and simplifying the manufacturing process despite high device density.
Solution Approach 2:
The solution addresses layout complexity by introducing a spatial dimension-based classification approach, where gate structures are differentiated based on their position in the cell array (edge versus internal). This dimensional classification enables systematic management of isolation requirements across scaled device arrays.
Data Source
AI summary
A semiconductor device includes: a first gate structure at least partially overlapping first and second active regions; second and third gate structures at least partially overlapping the first active region; fourth and fifth gate structures at least partially overlapping the second active region; a first conductive structure between the first and third gate structures and in contact with the first active region; a first electrical connection connecting the first gate structure with the first conductive structure; a second conductive structure between the first and fifth gate structures and in contact with the second active region; a second electrical connection connecting the first gate structure with the second conductive structure; a third electrical connection connecting the second gate structure with the third gate structure and the first conductive structure; and a fourth electrical connection connecting the fourth gate structure with the fifth gate structure and the second conductive structure.