Semiconductor Gate Layout Shifting for Lower Miller Capacitance
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Solution Overview
Problem
As semiconductor technology advances, increased parasitic capacitance becomes a challenge in achieving greater device density, particularly due to the Miller effect which disproportionately affects total capacitance in transistors.
Innovation Solution
The method involves shifting at least one gate pattern toward the source region of a transistor pattern based on capacitance calculations to minimize total capacitance, using a manufacturing process that includes specific layouts and photomasks to form semiconductor structures with optimized gate and contact placements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If gate patterns are arranged in a regular grid layout to simplify manufacturing, then manufacturing precision is improved, but parasitic capacitance increases due to the Miller effect
Solution Approach 1:
The patent applies asymmetry by intentionally offsetting gate patterns from their regular grid positions. Specifically, gates in even rows are shifted by a first offset amount while gates in odd rows are shifted by a second offset amount, creating an asymmetric arrangement that reduces parasitic capacitance between adjacent gates while maintaining manufacturing feasibility through defined offset rules
Solution Approach 2:
The patent implements local quality by applying different offset strategies to different rows of gates. Even rows receive one offset treatment while odd rows receive another, allowing localized optimization of capacitance reduction in different regions of the semiconductor device without compromising overall manufacturing precision
2Productivity
If device density is increased to improve productivity, then productivity is improved, but parasitic capacitance increases due to closer spacing
Solution Approach 1:
The asymmetric offset pattern allows devices to be packed more densely while maintaining adequate effective spacing between gates. By staggering gates in alternating rows, the patent achieves higher device density without proportionally increasing parasitic capacitance, as the offset reduces the overlapping electric field regions between adjacent gates
3Object-generated harmful factors
If gate patterns are offset to reduce parasitic capacitance, then parasitic capacitance is reduced, but manufacturing complexity increases
Solution Approach 1:
The patent segments the gate array into even and odd rows, applying different offset rules to each segment. This segmentation simplifies the overall design by breaking down the complex offset pattern into two manageable, repeating units that can be easily implemented using standard photolithography techniques with appropriate mask designs
Solution Approach 2:
The patent changes the spatial parameters of gate patterns by introducing controlled offset distances (first offset amount and second offset amount) between gates in alternating rows. These parameter changes are systematically applied to reduce parasitic capacitance while maintaining compatibility with existing manufacturing processes through defined offset relationships
Data Source
AI summary
A method for manufacturing a semiconductor structure is provided. A first layout is received, wherein the first layout comprises at least a pattern of an active region extending in a first direction. A second layout comprising a plurality of gate patterns extending in a second direction substantially perpendicular to the first direction is received, wherein distances between adjacent gate patterns are substantially consistent among the plurality of gate patterns. The first layout and the second layout are overlapped, thereby forming a plurality of transistor patterns. One of the plurality of gate patterns is shifted toward a source of one of the transistor patterns to form a third layout. A first photomask including the third layout is formed. The third layout of the photomask is transferred to form a plurality of gate structures over a substrate. A semiconductor structure thereof is also provided.