Semiconductor Gate Line with Rotational Symmetry for Short Circuit Prevention
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Solution Overview
Problem
As semiconductor devices miniaturize, ensuring a minimum distance between internal patterns to prevent short circuits becomes challenging due to variations in critical dimensions and line edge roughness, making it difficult to maintain design rule constraints for efficient space utilization.
Innovation Solution
The semiconductor device incorporates a unique gate line structure with 180° rotational symmetry and right-angled trapezoidal end portions, along with strategically placed contact parts, to maintain distance and prevent short circuits, while allowing for efficient patterning and integration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If the critical dimension is reduced to increase integration density, then the area utilization improves, but the manufacturing precision deteriorates due to dispersion uniformity and line edge roughness
Solution Approach 1:
The gate line employs asymmetric configuration where the first gate part has a different width than the second gate part. Specifically, the first gate part has a greater width than the second gate part, creating an asymmetric structure that compensates for patterning variations and maintains manufacturing precision while achieving high area utilization through optimized space arrangement.
Solution Approach 2:
Different sections of the gate line have different local properties - the first gate part has a greater width compared to the second gate part. This local quality variation allows each section to be optimized for its specific function, with the wider first gate part providing better control margin in regions more susceptible to patterning variations.
2Productivity
If the minimum distance between patterns is reduced to increase integration, then the productivity improves, but the reliability deteriorates due to short circuit risk
Solution Approach 1:
The gate line extends into a middle area between first and second active areas, utilizing the vertical dimension and intermediate space that would otherwise be unused. By placing the third gate part in the middle area and extending the gate line structure vertically through the stack, the design achieves higher integration density without reducing the horizontal minimum distance between patterns, thus maintaining reliability.
Solution Approach 2:
The gate line structure is nested within the three-dimensional stack configuration, with the gate line extending through multiple levels and utilizing the middle area between active areas. This nesting approach allows the gate line to occupy unused vertical and intermediate space, achieving high integration without compromising the minimum distance requirements between patterns.
3Ease of manufacture
If the gate line structure is simplified to reduce device complexity, then the ease of manufacture improves, but the manufacturing precision deteriorates due to patterning constraints
Solution Approach 1:
The gate line is segmented into distinct parts - a first gate part, a second gate part, and a third gate part located in the middle area. This segmentation allows each part to be independently optimized and controlled during patterning, with the first and second gate parts having different widths to account for varying patterning challenges in different regions, thereby maintaining manufacturing precision while using standard patterning processes.
Data Source
AI summary
A semiconductor device includes a first active area, a second active area and a first gate line. The second active area is spaced apart from the first active area. The first gate line includes a first gate part crossing the first active area along a first imaginary line, a second gate part crossing the second active area along a second imaginary line, and a third gate part connecting the first gate part and the second gate part and extending along a third imaginary line crossing the first imaginary line and the second imaginary line. The first gate part, the second gate part and the third gate part are arranged so that the first gate line has a shape of 180° rotational symmetry. A point of the rotational symmetry is located on the first gate part.