Semiconductor Gate Line Symmetry via Vertical Conductive Plugs
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The existing semiconductor device structures, such as 6T SRAM, face performance degradation due to the cutting of gate lines, which disrupts symmetry and affects the conductive properties of transistors, especially when extended to connect external ports, leading to asymmetric operation and reduced performance.
Innovation Solution
A semiconductor device structure that maintains symmetry by using conductive structures, such as conductive plugs, to electrically connect gate line terminals across layers, allowing for intentional cutting of gate lines while maintaining symmetric operation and performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If the gate line is extended to connect to external ports, then external connectivity is achieved, but the symmetry of the circuit layout is broken causing performance degradation
Solution Approach 1:
The patent introduces a vertical dimension by routing the gate line through multiple layers. The gate line is formed in a first circuit layer, cut at a gap, and then connected through a conductive structure in a second circuit layer. This multi-layer approach allows external port connectivity while maintaining symmetry in the horizontal plane, as the connection is achieved vertically rather than by extending the gate line laterally which would break symmetry.
Solution Approach 2:
The gate line is divided into multiple segments separated by a gap. Instead of a continuous gate line that would require asymmetric extension to reach external ports, the gate line is segmented into first and second portions that can be independently formed with symmetric layout. The segments are then electrically connected through a conductive structure, achieving external connectivity without compromising the symmetry of individual segments.
2Adaptability or versatility
If the gate line is cut into multiple segments, then external connection is enabled, but physical stress occurs affecting conductive properties
Solution Approach 1:
A conductive structure is introduced as an intermediary element to connect the segmented gate line portions. This conductive structure, formed in the second circuit layer, serves as a mediator that electrically connects the first and second gate line segments while providing mechanical support. The intermediary conductive structure reduces the impact of the gap and minimizes physical stress on the gate line segments, thereby maintaining conductive properties.
Solution Approach 2:
The connection between gate line segments is moved from the horizontal plane to the vertical dimension by using a conductive structure in a second circuit layer. This vertical connection approach allows the gate line to be cut in the first circuit layer without creating horizontal stress concentrations, as the electrical connection is established through the thickness of the device rather than along the plane, reducing stress-induced conductive property changes.
3Adaptability or versatility
If the gate line is extended asymmetrically for read port connection, then interface functionality is added, but transistor operation performance is reduced
Solution Approach 1:
The patent implements interface functionality by extending connectivity in the vertical dimension rather than horizontally. The gate line connection to external ports is achieved through a multi-layer structure where the conductive connection is established in a second circuit layer above or below the first circuit layer. This allows the read port interface to be connected without extending the gate line asymmetrically in the horizontal plane, thereby maintaining symmetric transistor layout and optimal operation performance.
Solution Approach 2:
The gate line is segmented into multiple portions with a gap between them, allowing the interface connection to be implemented through a separate conductive structure rather than by asymmetrically extending the original gate line. The first gate line segment connects to transistors symmetrically, while the second segment connects to external ports through the conductive structure, separating the interface functionality from the symmetric transistor circuit.
Data Source
AI summary
A semiconductor device includes a first circuit structure and a second circuit structure. The first circuit structure has a first line terminal. The second circuit structure has a second line terminal. The first line terminal and the second line terminal are formed in a first circuit layer but separated by a gap. A conductive structure is forming in a second circuit layer above or below the first circuit layer, to electrically connect the first line terminal and the second line terminal.