Semiconductor Gate Lines with Varying Widths via Segmented Dummy Structures
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Solution Overview
Problem
The challenge is to create a semiconductor device with various line widths while maintaining reliability and reducing manufacturing costs, as existing methods require complex processes that degrade reliability and increase costs.
Innovation Solution
A method involving the formation of dummy gate structures on a substrate with different regions, each with specific pitches and widths, followed by the use of cover layers and spacer layers to create gate lines with varying widths, simplifying the process and improving reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If complex processes are used to implement various line widths, then different line widths can be achieved, but reliability degrades and manufacturing costs increase
Solution Approach 1:
The substrate is divided into first and second regions with different dummy gate structure configurations. The first region has dummy gate structures with first pitches, while the second region has dummy gate structures with second pitches. This segmentation allows each region to be optimized for different line width requirements independently, achieving various line widths without requiring complex overall processes that would degrade reliability.
Solution Approach 2:
Different dummy gate structure pitches are applied to different regions of the substrate based on local requirements. The first region uses first pitches suitable for first line widths, while the second region uses second pitches suitable for second line widths. This local quality approach ensures that each region has the optimal structure for its specific function, achieving various line widths while maintaining reliability through region-specific optimization rather than forcing a complex universal process.
2Adaptability or versatility
If complex processes are used to implement various line widths, then different line widths can be achieved, but manufacturing costs increase
Solution Approach 1:
The substrate is divided into first and second regions with different dummy gate structure configurations. The first region has dummy gate structures with first pitches, while the second region has dummy gate structures with second pitches. This segmentation allows each region to be optimized for different line width requirements independently, achieving various line widths without requiring complex overall processes that would increase manufacturing costs.
Solution Approach 2:
Different dummy gate structure pitches are applied to different regions of the substrate based on local requirements. The first region uses first pitches suitable for first line widths, while the second region uses second pitches suitable for second line widths. This local quality approach ensures that each region has the optimal structure for its specific function, achieving various line widths while maintaining ease of manufacture through region-specific optimization rather than forcing a complex universal process.
3Ease of manufacture
If uniform dummy gate structures are formed across the substrate, then manufacturing is simplified, but various line widths cannot be achieved
Solution Approach 1:
The substrate is divided into first and second regions with different dummy gate structure configurations. The first region has dummy gate structures with first pitches, while the second region has dummy gate structures with second pitches. This segmentation maintains manufacturing simplicity within each region while enabling various line widths across different regions through the pitch differences.
Solution Approach 2:
Different dummy gate structure pitches are applied to different regions of the substrate based on local requirements. The first region uses first pitches suitable for first line widths, while the second region uses second pitches suitable for second line widths. This local quality approach maintains ease of manufacture by using standard formation processes in each region while achieving various line widths through region-specific pitch variations.
Data Source
AI summary
Provided are semiconductor devices having various line widths and a method of manufacturing the semiconductor device. The semiconductor device includes: a substrate including a first region and a second region, a plurality of first gate lines extending in a first direction in the first region and each having a first width in a second; a plurality of second gate lines extending in the first direction in the second region and each having a second width that is different from the first width in the second direction and a pitch that is the same as a pitch of the plurality of first gate lines; a spacer layer covering opposite side walls of each of the plurality of first gate lines and each of the plurality of second gate lines; and a first base layer arranged between the substrate and the spacer layer in the first region.