Semiconductor Gate Metal Oxygen Control for Threshold Voltage
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Solution Overview
Problem
Current semiconductor technologies face challenges in effectively adjusting the threshold voltages of transistors, which is crucial for optimizing device performance, as existing methods often result in poor interface formation and increased leakage current due to oxygen atom imbalances during the fabrication process.
Innovation Solution
A method for fabricating semiconductor devices involves forming interlayer insulation films with trenches, conformally depositing dielectric and conductive films, and performing annealing processes while shielding conductive films to control oxygen atom distribution, thereby adjusting threshold voltages by varying the thickness and width of finned active patterns and conductive films in different transistor regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional methods are used to adjust threshold voltages, then threshold voltage adjustment is attempted, but interface quality deteriorates and leakage current increases due to oxygen atom imbalances
Solution Approach 1:
The patent changes the physical and chemical parameters of the conductive film by controlling oxygen atom incorporation during deposition and annealing processes. By adjusting deposition conditions and annealing temperature, the oxygen content in the conductive film is precisely controlled to achieve desired threshold voltage characteristics without compromising interface quality
Solution Approach 2:
The patent employs composite material structures including work function tuning films, barrier films, metal films, and conductive films with controlled oxygen content. These layered composite structures allow independent optimization of each layer's properties to achieve both precise threshold voltage control and high interface quality
2Adaptability or versatility
If multiple film layers are deposited to control threshold voltage, then threshold voltage adjustment capability is improved, but device structure becomes more complex
Solution Approach 1:
The gate structure is segmented into multiple functional layers: work function tuning film, barrier film, metal film, and conductive film. Each segment performs a specific function, allowing independent optimization and simplifying the design process for achieving target threshold voltages
Solution Approach 2:
The conductive film serves multiple functions: it acts as part of the gate electrode, provides oxygen atom reservoir for annealing, and influences threshold voltage through its electrical properties. This multi-functionality reduces the need for separate dedicated structures
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for precise control of threshold voltages in NMOS and PMOS transistors, enhancing device performance by reducing leakage current and improving interface quality, enabling the fabrication of transistors with targeted voltage characteristics.
Implementation Method 1
performing annealing after the forming of the first and second shield films
Implementation Method 2
forming a first shield film on the first conductive film and a second shield film on the second conductive film
Data Source
AI summary
Methods of forming semiconductor devices are provided. A method of forming a semiconductor device includes forming first and second dielectric layers in first and second trenches. The method includes forming first and second conductive layers on the first and second dielectric layers, respectively. The method includes forming first and second protective layers on the first and second conductive layers, respectively. The method includes performing an annealing process while the first and second protective layers are on the first and second conductive layers. The method includes removing the first and second protective layers. The method includes removing the first conductive layer, after performing the annealing process. Moreover, the method includes forming first and second gate metals in the first and second trenches, respectively, after removing the first conductive layer.