Semiconductor Gate Terminal Conduction via Ceramic-Embedded Metal Protrusion
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Solution Overview
Problem
Power modules face challenges in ensuring reliable electrical conductivity between semiconductor chips and circuits, particularly for gate terminals with smaller areas, and in achieving effective heat dissipation due to the lower thermal conductivity of ceramic control signal circuits compared to metal circuits.
Innovation Solution
A semiconductor device with a wire layer within a ceramic layer and a metal layer that connects non-gate terminals, where the gate terminal is electrically connected to the wire layer via a conductive protrusion extending beyond the metal layer, ensuring conductivity and heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a ceramic layer is used for the control signal circuit, then insulation performance is improved, but thermal conductivity deteriorates
Solution Approach 1:
The patent uses a composite structure combining ceramic layer for insulation and metal protrusion for thermal conduction. The ceramic layer provides electrical insulation while the metal protrusion embedded within it provides a thermal conduction path, creating a composite material system that simultaneously achieves both insulation and heat dissipation functions.
2Volume of moving object
If the gate terminal area is reduced, then device miniaturization is achieved, but alignment precision deteriorates
Solution Approach 1:
The metal protrusion acts as an intermediary element between the gate terminal and the wire layer. It extends the connection point vertically, creating a larger effective bonding area that compensates for the reduced gate terminal area, thereby improving alignment tolerance and bonding reliability despite miniaturization.
3Reliability
If the connection portion is extended toward the semiconductor switching element, then electrical conductivity is improved, but thermal deformation risk increases
Solution Approach 1:
The metal protrusion is embedded within the ceramic layer, creating a nested structure where the metal connection element is contained within the insulating ceramic matrix. This nesting provides mechanical support and thermal stability from the ceramic while the metal core maintains electrical conductivity, reducing thermal deformation risk.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration ensures reliable electrical conductivity between the gate terminal and the wire layer while enhancing heat dissipation, achieving both high reliability and efficient heat management.
Implementation Method 1
the gate terminal of the semiconductor switching element and the wire layer are electrically connected with each other via a connection portion formed of conductive material
Implementation Method 2
the connection portion is protruded more than the metal layer toward the semiconductor switching element... capable of ensuring heat dissipation
Data Source
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AI summary
The objective of the present invention is to provide a technique that ensures conduction between a gate terminal of a semiconductor switching element and a wiring layer in a semiconductor device formed with a wiring layer inside a ceramic layer. This semiconductor device comprises: a wiring layer that is inside a ceramic layer formed above an insulation layer; and a metal layer for connecting terminals from the semiconductor switching element other than the gate terminal. The wiring layer and the gate terminal from the semiconductor switching element are connected electrically via a connection part formed from a conductive material. The connection part protrudes more than the metal layer toward the semiconductor switching element