Semiconductor Gate Structures with Multiple Dimensions
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Solution Overview
Problem
The challenge in semiconductor device fabrication lies in achieving improved quality, yield, performance, and reliability while reducing complexity and cost, particularly due to the increasing complexity and issues encountered during the down-scaling of semiconductor devices.
Innovation Solution
A semiconductor device design featuring multiple dimensions of gate structures, including a first gate structure with a narrower width and shallower depth in the array area and a second gate structure with a wider width and greater depth in the peripheral area, along with specific layer configurations and doped regions, which allows for concurrent fabrication utilizing the loading effect to simplify the process and reduce costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If gate structures with different dimensions are fabricated using separate processes, then manufacturing precision is improved, but device complexity and fabrication cost increase
Solution Approach 1:
The patent combines the fabrication of first gate structures and second gate structures into a single unified process. Multiple gate structures with different dimensions are formed simultaneously in different regions of the substrate using one etching process, eliminating the need for separate fabrication processes and reducing overall device complexity while maintaining manufacturing precision
Solution Approach 2:
The patent applies local quality by using a single etching process with different etching conditions in different regions. The etching rate is controlled to be faster in regions where second gate structures are formed and slower in regions where first gate structures are formed, allowing each region to receive optimized etching treatment locally while using the same overall process
2Manufacturing precision
If multiple etching processes are used to create gate structures of different dimensions, then manufacturing precision is improved, but fabrication time and cost increase
Solution Approach 1:
The patent merges multiple etching operations into a single etching process that simultaneously forms gate structures of different dimensions. By controlling etching rates through local conditions rather than using separate processes, the patent achieves precise dimension control while maintaining high fabrication throughput and productivity
Solution Approach 2:
The patent changes etching parameters locally within the same process. By adjusting etching rate, etching depth, and other etching conditions in different regions of the substrate, the patent achieves precise control over gate structure dimensions without requiring multiple sequential etching processes, thereby improving productivity
Data Source
AI summary
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate including an array area and a peripheral area adjacent to the array area, a first gate structure positioned in the array area, and a second gate structure positioned in the peripheral area. A width of the first gate structure is less than a width of the second gate structure, and a depth of the first gate structure is less than a depth of the second gate structure.