Semiconductor Gate Structure for Multi-Voltage HKMG Integration
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Solution Overview
Problem
The integration of transistors with different operating voltages in a single semiconductor substrate is challenging due to the need for extra manufacturing steps and increased costs, particularly in incorporating high-voltage and medium-voltage devices with low-voltage devices, which can degrade device performance and increase production time.
Innovation Solution
A semiconductor structure and method where low-voltage devices share HKMG processes with high/medium-voltage devices, forming an insulating layer to prevent breakdown between gate and source/drain regions, and using protection structures to maintain the integrity of high/medium-voltage devices during planarization, allowing for simultaneous integration and reducing manufacturing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If high-voltage and medium-voltage devices are integrated with low-voltage devices in a single semiconductor substrate, then device functionality and versatility are improved, but manufacturing complexity and production time increase due to extra steps and operations
Solution Approach 1:
The semiconductor substrate is divided into first device region and second device region, where high/medium-voltage devices are formed in the first region and low-voltage devices are formed in the second region. This spatial segmentation allows different voltage devices to coexist without requiring separate substrates, thereby improving versatility while managing manufacturing complexity through region-specific processing
Solution Approach 2:
Different gate structures are implemented in different regions: high/medium-voltage devices use first gate structures with specific characteristics while low-voltage devices use second gate structures with different characteristics. This local differentiation enables each region to be optimized for its specific voltage requirements while sharing the same substrate, resolving the contradiction between versatility and manufacturing complexity
2Adaptability or versatility
If high-voltage and medium-voltage devices are integrated with low-voltage devices in a single semiconductor substrate, then device functionality is improved, but production time increases due to extra manufacturing steps
Solution Approach 1:
The method combines the formation of high/medium-voltage devices and low-voltage devices into a single integrated process flow on one substrate. By merging previously separate manufacturing processes into one unified approach with shared process steps, the invention reduces overall production time while maintaining the ability to produce multiple voltage devices simultaneously
Solution Approach 2:
The method performs preliminary actions by forming protection structures and insulating layers in advance before final device completion. These preliminary structures are prepared during early processing stages to prevent damage and breakdown during subsequent manufacturing steps, thereby avoiding rework and reducing total production time
3Adaptability or versatility
If high-voltage and medium-voltage devices are integrated with low-voltage devices in a single semiconductor substrate, then device functionality is improved, but manufacturing cost increases due to extra steps and operations
Solution Approach 1:
The manufacturing method achieves universality by using a single substrate and shared processing steps to produce multiple types of voltage devices. The common process steps can be applied across all device regions, eliminating the need for separate manufacturing lines and reducing overall manufacturing cost while maintaining versatility
Solution Approach 2:
The protection structures and insulating layers are formed as integral parts of the manufacturing process itself, serving dual purposes: they protect vulnerable device regions during processing and become functional components of the final device. This self-service approach eliminates the need for separate protective measures, reducing manufacturing steps and cost
4Reliability
If protection structures and insulating layers are added to prevent breakdown between gate and source/drain regions, then device reliability is improved, but device complexity increases
Solution Approach 1:
An insulating layer is introduced as an intermediary between the gate structure and source/drain regions. This intermediary layer prevents direct electrical breakdown while maintaining the functional integrity of both components. The insulating layer acts as a mediator that resolves the electrical conflict without requiring fundamental redesign of the device architecture
Solution Approach 2:
The device structure employs composite material layers including protection structures and insulating layers combined with semiconductor materials. These composite structures provide both mechanical protection and electrical isolation, improving reliability while the layered composite approach allows each material to perform its specific function efficiently
Data Source
AI summary
A semiconductor structure and a method for forming a semiconductor structure are provided. The a semiconductor structure includes: a substrate; a gate electrode disposed within the substrate; a plurality of first protection structures disposed over the gate electrode; a second protection structure disposed over the gate electrode adjacent to the plurality of first structures; and an insulating layer between the second protection structure and the gate electrode.