Semiconductor Device Common Gate Pattern Overlap Reducing Parasitic Capacitance
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Solution Overview
Problem
As CMOS transistors are packed more densely on smaller areas, parasitic capacitance affects their operation and speed, which existing technologies have not adequately addressed.
Innovation Solution
A semiconductor device design featuring a substrate with isolation regions, trench structures, buried conductive patterns, and common gate patterns that overlap these regions, reducing parasitic capacitance by allowing the common gate pattern to extend in a direction perpendicular to the buried conductive pattern, thus improving routing and reducing capacitance between wiring lines and gate patterns.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If CMOS transistors are packed more densely on smaller areas, then integration density is improved, but parasitic capacitance increases affecting operation and speed
Solution Approach 1:
The patent applies dimensionality change by extending the common gate pattern in the first direction (perpendicular to the second direction) to overlap multiple regions including the isolation region. This spatial rearrangement in a different dimension reduces parasitic capacitance between wiring lines and gate patterns while maintaining high integration density. The gate pattern extends beyond traditional boundaries into the isolation region, utilizing vertical and horizontal space more efficiently.
Solution Approach 2:
The patent introduces an intermediary structure by extending the common gate pattern to overlap the isolation region, which acts as a mediator between the first and second regions. This intermediary gate pattern configuration reduces the harmful parasitic capacitance effect by creating a controlled overlap structure that manages electrical interference while maintaining signal integrity and device performance.
2Object-affected harmful factors
If common gate pattern extends perpendicular to buried conductive pattern, then parasitic capacitance is reduced, but routing complexity increases
Solution Approach 1:
The patent merges multiple functions into the common gate pattern by extending it to serve as both a functional gate electrode and a structural element that spans across the isolation region. This merging approach allows the gate pattern to simultaneously perform its primary switching function while also acting as a capacitance-reducing structure, thereby simplifying the overall routing architecture despite the perpendicular orientation to buried conductive patterns.
Solution Approach 2:
The common gate pattern is designed with multi-functionality, serving not only as a gate electrode for transistor control but also as a capacitance-management structure that overlaps the isolation region. This universal design reduces parasitic capacitance while maintaining routing efficiency, as the same structural element performs multiple critical functions in the device architecture.
Data Source
AI summary
A semiconductor device is provided. A cell region is disposed in a substrate. The cell region includes a memory cell. A peripheral region is disposed in the substrate. The peripheral region is adjacent to the cell region. The peripheral region has a trench isolation, a first active region and a second active region. The trench isolation is interposed between the first active region and the second active region. A common gate pattern is disposed on the peripheral region. The common gate pattern extends in a first direction and partially overlaps the first active region, the second active region and the trench isolation. A buried conductive pattern is enclosed by the trench isolation. The buried conductive pattern extends in a second direction crossing the first direction. A top surface of the buried conductive pattern is lower than a bottom surface of the common gate pattern.