3D Semiconductor Gate Electrode Pad Region Layout
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Solution Overview
Problem
The existing semiconductor devices face limitations in achieving high degrees of integration due to the increasing size of pad regions arrayed in a single direction, which restricts the stacking of gate electrodes on a semiconductor substrate.
Innovation Solution
The semiconductor device incorporates gate electrodes with pad regions sequentially lowered by multiple step portions in different directions, allowing for a three-dimensional arrangement that enhances integration by varying the length of pad regions in specific directions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If pad regions are arrayed in a single direction with stepped shape, then manufacturing process is simplified, but the plane size increases limiting high degree of integration
Solution Approach 1:
The pad regions are arranged not only in the first direction (row direction) but also in the second direction (column direction), forming a two-dimensional array. This dimensional expansion allows the pad regions to be distributed across both directions rather than confined to a single direction, thereby reducing the plane size required while maintaining the stepped shape configuration.
2Productivity
If pad regions are arranged in multiple directions, then integration degree is improved, but manufacturing complexity increases
Solution Approach 1:
The invention applies different characteristics to different regions: pad regions in the first direction have a first length, while pad regions in the second direction have a second length. This local differentiation allows optimization for both directions simultaneously, achieving high integration without uniformly increasing complexity across the entire device structure.
3Ease of manufacture
If all pad regions have uniform length in second direction, then manufacturing is easier, but connection reliability may be compromised
Solution Approach 1:
The invention introduces asymmetry in the pad region dimensions: pad regions in the first direction have a first length, while pad regions in the second direction have a second length that differs from the first length. This asymmetric design optimizes the connection reliability for each directional arrangement, allowing better electrical connection and signal transmission without compromising manufacturing feasibility.
Data Source
AI summary
A three-dimensional semiconductor device includes gate electrodes including pad regions sequentially lowered by a first step portion in a first direction and sequentially lowered by a second step portion in a second direction perpendicular to the first direction, the second step portion being lower than the first step portion, wherein a length of a single pad region among pad regions sequentially lowered by the second step portion in the second direction is less than a length of a remainder of the pad regions in the second direction.