Semiconductor Gate Pad Placement for Uniform Voltage
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor devices, such as IGBTs, face challenges in maintaining withstand capability due to non-uniform gate voltage distribution and thermal management issues, leading to decreased performance and reliability.
Innovation Solution
The semiconductor device incorporates a gate metal layer surrounding the active section, a temperature-sensing unit, and a temperature-measurement pad connected by a wire, along with a gate runner and dummy gate metal layer to ensure uniform gate voltage and accurate temperature sensing, preventing decreases in turn-off withstand capability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If the gate pad is arranged in the extending region of the temperature-sensing wire, then the layout is simplified, but the gate voltage distribution becomes non-uniform causing decrease in turn-off withstand capability
Solution Approach 1:
The peripheral region is divided into multiple regions by the extending region of the temperature-sensing wire. The gate pad is specifically arranged in a region other than the extending region, while voltage-supplying pads can be arranged in the same divided region as the gate pad. This segmentation approach separates the gate pad placement from the temperature-sensing wire path, preventing interference and ensuring uniform gate voltage distribution while maintaining manageable layout complexity.
2Reliability
If the gate pad is positioned to optimize electrical connection, then gate voltage supply is improved, but thermal management and temperature sensing accuracy deteriorate
Solution Approach 1:
The gate pad is extracted from the extending region of the temperature-sensing wire and placed in a separate region. This extraction eliminates the interference between the gate pad and temperature-sensing wire, ensuring that temperature sensing accuracy is not compromised while maintaining optimal gate voltage distribution. The gate pad and temperature-sensing wire are spatially separated to avoid mutual interference.
3Ease of operation
If multiple pads are arranged in the peripheral region, then electrical connections are improved, but the risk of interference between gate pad and temperature-sensing wire increases
Solution Approach 1:
Different regions of the peripheral region are assigned different functions based on their spatial relationship with the temperature-sensing wire. The extending region is designated for temperature sensing operations, while regions other than the extending region are designated for gate pad placement. This local quality differentiation ensures that each pad is placed in an appropriate region, minimizing interference while maintaining comprehensive electrical connection capabilities.
Data Source
AI summary
A semiconductor device is provided, including: a semiconductor substrate; an active section in which current flows between upper and lower surfaces of the semiconductor substrate; a transistor section provided in the active section; a gate metal layer to supply a gate voltage to the transistor section; a gate pad electrically connected to the gate metal layer; a temperature-sensing unit provided above the active section; a temperature-measurement pad arranged in a peripheral region between the active section and an outermost perimeter of the semiconductor substrate; and a temperature-sensing wire having a longitudinal portion and connecting the temperature-sensing unit and the temperature-measurement pad, wherein on the upper surface of the semiconductor substrate, the gate pad is arranged in a region other than an extending region that is an extension of the longitudinal portion of the temperature-sensing wire to the outermost perimeter of the semiconductor substrate in the longitudinal direction.