Semiconductor Gate Pitch Variation for Thermal Management
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Solution Overview
Problem
Semiconductor devices face issues with uneven temperature distribution, leading to heat loss and reduced output power due to the concentration of heat generation at the gate position, which existing heat dissipation methods fail to effectively address without increasing complexity or reducing chip density.
Innovation Solution
The semiconductor device design incorporates varying gate pitches, with a maximum and minimum pitch range determined by the number of gates, to achieve uniform temperature distribution by adjusting the distances between adjacent gate fingers, thereby reducing heat loss and enhancing output power without increasing the device volume.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If gate pitch is uniformly distributed, then device structure is simple and easy to manufacture, but temperature distribution becomes uneven causing heat loss and reduced output power
Solution Approach 1:
The patent applies local quality by making different regions of the gate array have different gate pitches. Specifically, gates are divided into first gates and second gates, where the gate pitch between adjacent first gates differs from the gate pitch between adjacent second gates. This local differentiation optimizes heat dissipation in different regions of the device while maintaining overall structural simplicity.
2Power
If gate pitch is adjusted to improve temperature distribution, then output power increases, but manufacturing precision requirements increase
Solution Approach 1:
The patent segments the gate array into distinct groups (first gates and second gates) with different pitch characteristics. This segmentation allows for controlled variation in gate pitch while maintaining manufacturability, as each segment can be defined by clear geometric relationships rather than continuous complex variations.
3Reliability
If non-uniform gate pitch is implemented, then temperature distribution becomes uniform reducing heat loss, but device structure complexity increases
Solution Approach 1:
The patent introduces asymmetry in the gate pitch distribution by defining different pitch values for different gate groups. The first gate pitch and second gate pitch are deliberately made different, creating an asymmetric pattern that optimizes thermal characteristics while maintaining a regular, manufacturable structure.
Data Source
AI summary
Embodiments of the disclosure provide a semiconductor device, a semiconductor chip and a method of manufacturing a semiconductor device, wherein the semiconductor device, includes a substrate, a semiconductor layer formed on the substrate, a plurality of gates, drains, and a plurality of sources formed on a side of the semiconductor layer away from the substrate, the gates located between the sources and the drains, and the gates, sources, and drains located in an active region of the semiconductor device, wherein a gate pitch is formed between any two adjacent gates, the formed respective gate pitches include at least two unequal gate pitches, the maximum gate pitch of the respective gate pitches is within a first preset range determined according to a pitch of two gates at the two outermost ends in the semiconductor device in the gate length direction and a total number of gates of the semiconductor device.