Semiconductor Gate Oxide Plasma Damage Protection
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Solution Overview
Problem
Plasma damage during semiconductor manufacturing processes affects the characteristics of semiconductor devices, leading to unpredictable changes in device and design characteristics due to positive charging of gate patterns and subsequent discharge phenomena.
Innovation Solution
Connecting an N+ or P+ junction to the gate of a transistor through a first wiring layer, with diodes formed between the gate and the wiring layer to discharge accumulated charges and prevent damage to the gate oxide.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If plasma gas is used for depositing or etching thin films, then film formation capability is improved, but plasma damages occur causing device characteristic changes
Solution Approach 1:
A conductive layer is introduced as an intermediary between the gate pattern and the substrate. This conductive layer acts as a mediator that receives positive charges from plasma exposure and redirects negative particles away from the gate oxide, preventing direct damage to the gate structure while allowing plasma processes to continue
Solution Approach 2:
The invention converts the harmful plasma charging effect into a beneficial protective mechanism. By allowing the conductive layer to accumulate positive charges during plasma exposure, the structure creates an electric field that actively repels negative particles from the gate oxide, transforming the harmful charge accumulation into a protective shield
2Strength
If gate pattern is covered with thick insulating layer, then gate pattern protection is improved, but gate oxide becomes more susceptible to plasma damage
Solution Approach 1:
The conductive layer serves as a new intermediary positioned between the gate pattern and substrate, replacing the traditional role of thick insulating layers. This conductive intermediary actively manages charge distribution and particle flow, protecting the gate oxide from plasma damage while maintaining gate pattern integrity
3Quantity of substance
If negative particles are attracted to positively charged gate pattern, then charge accumulation is improved, but gate oxide discharge phenomenon increases causing damage
Solution Approach 1:
The invention converts the harmful discharge phenomenon into a beneficial charge management mechanism. The conductive layer intentionally accumulates positive charges and uses this charge accumulation to create an electric field that attracts and redirects negative particles away from the gate oxide, transforming the damaging discharge into a protective charge redirection system
Solution Approach 2:
The conductive layer acts as a charge management intermediary that decouples the charge accumulation process from the gate oxide. It receives and holds positive charges, then uses this charge state to control negative particle flow, preventing direct charge discharge through the gate oxide while maintaining overall charge balance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively prevents plasma damage to the gate oxide, maintaining stable device characteristics and ensuring consistent performance by discharging accumulated charges, thereby securing the operating characteristics and yield of semiconductor devices.
Implementation Method 1
a first diode to discharge charges accumulated on the first gate
Implementation Method 2
The plasma ion gas used in the above processes charges up conductive layer patterns on the wafer into positive ions
Data Source
AI summary
A semiconductor device features connecting gate patterns of all transistors to a N+ or +P junction by the first connected wiring layer to prevent degradation of characteristics of the semiconductor device which results from plasma damages during a process. In order to connect a junction to a gate layer weak to plasma damages, the gate layer is connected to the N+ or P+ junction when a first wiring layer after a transistor is formed. As a result, when the gate layer is charged up by plasma damages, the gate layer is discharged by the junction or provided to receive (−) ions or electrons so that a gate oxide is not affected by plasma damages.