Semiconductor Gate Protrusions for Plug Coverage
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor manufacturing processes face challenges in achieving high coverage ratios of contact plugs over metal gates, particularly when miniaturized, leading to suboptimal electrical performance due to optical limitations and improper plug formation.
Innovation Solution
The method involves forming semiconductor devices with gates that have protruding portions on either side, aligned symmetrically, and corresponding plugs with central axes shifted to match the protruding portions, ensuring a coverage ratio of at least 70% by adjusting the dimensions and directions of these protrusions based on plug positions and process conditions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional manufacturing processes are used to form contact plugs and metal gates, then the basic device structure can be created, but the coverage ratio between plugs and gates deteriorates when miniaturized, leading to improper plug formation and reduced electrical performance
Solution Approach 1:
The gate structure is designed with asymmetric protruding portions that extend in the second direction. The protruding portions have different dimensions on opposite sides of the gate, creating an asymmetric geometry that enables better alignment with the contact plugs. This asymmetric design allows the plug central axes to be shifted relative to the gate central axes, improving the coverage ratio between plugs and gates while maintaining proper electrical connections.
2Manufacturing precision
If the central axes of plugs are aligned with the central axes of gates, then symmetric design is maintained, but the coverage ratio decreases and plug formation becomes improper at miniaturized dimensions
Solution Approach 1:
The gate structure incorporates asymmetric protruding portions that break the symmetric alignment between plug central axes and gate central axes. The protruding portions extend in the second direction with different dimensions on opposite sides, creating a deliberately asymmetric configuration that improves coverage ratio while the overall device structure remains manageable through systematic design.
Solution Approach 2:
The solution addresses the alignment problem by introducing dimensional shifts in the second direction. The protruding portions extend in this direction, and the plug central axes are shifted relative to the gate central axes along this dimension. This dimensional approach allows the coverage ratio to be improved without requiring complete redesign of the entire device architecture.
3Productivity
If miniaturized through holes and inter-layer dielectric layers are used, then high integration and high-speed operation can be achieved, but optical limitations prevent proper plug formation at predetermined locations
Solution Approach 1:
The protruding portions are formed on the gates before the contact plugs are deposited. This preliminary action of creating the asymmetric gate structure with extended protruding portions establishes predetermined alignment features that guide subsequent plug formation. The protruding portions serve as pre-positioned structures that ensure proper plug placement and coverage, overcoming optical limitations in the manufacturing process.
Data Source
AI summary
A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a substrate, a plurality of gates and a plurality of plugs. The gates are disposed on the substrate and extend in a first direction. The gates include a first gate and a second gate. The first gate includes a first protruding portion extending in a second direction. The plugs are disposed parallel to one another on the substrate. The plugs include a first plug and a second plug. The first plug and the second plug cover the first gate and the second gate respectively. A central axis of the first plug is shifted from a central axis of the first gate toward the second direction, and a central axis of the second plug is shifted from a central axis of the second gate toward the second direction.