Semiconductor Gate Structure With Rare Earth Element Supply Layer
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Solution Overview
Problem
Semiconductor devices face challenges in achieving multiple threshold voltages without compromising reliability and performance, particularly due to limitations in doping methods that can lead to non-uniform dopant distribution and mobility issues.
Innovation Solution
A semiconductor device structure incorporating a gate structure with a rare earth element supply layer, a high-dielectric layer, and metal layers with adjustable work functions, allowing for precise control of threshold voltages through the diffusion of rare earth elements and aluminum, independent of each other's quantities, to achieve various threshold voltages without reliability deterioration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If traditional doping methods are used to adjust threshold voltages, then multiple threshold voltages can be achieved, but non-uniform dopant distribution and mobility deterioration occur
Solution Approach 1:
The patent changes the physical and chemical parameters of the gate structure by introducing a rare earth element supply layer and metal layers with adjustable work functions. By controlling the diffusion of rare earth elements and aluminum through temperature and time parameters, multiple threshold voltages are achieved without traditional doping, thereby avoiding non-uniform distribution and mobility deterioration while maintaining device reliability
Solution Approach 2:
The patent employs a composite gate structure consisting of multiple layers including interface layer, high-dielectric layer, rare earth element supply layer, and metal layers. This composite structure enables precise threshold voltage control through the combined effects of different materials (rare earth elements like La, Sc, Er, Sr, Yt and metals like Ti, Ta, Al) with distinct properties, achieving versatile threshold voltage adjustment without compromising device reliability
2Ease of manufacture
If the gate structure is simplified, then manufacturing cost is reduced, but threshold voltage control precision deteriorates
Solution Approach 1:
The gate structure is segmented into multiple functional layers: interface layer, high-dielectric layer, rare earth element supply layer, and metal layers. Each layer performs a specific function, allowing independent optimization and control. This segmentation enables precise threshold voltage control through adjustable work function metals and rare earth element diffusion while maintaining a systematic manufacturing process that is not excessively complex
3Adaptability or versatility
If more metal layers are added to the gate structure, then threshold voltage adjustment range is expanded, but device complexity increases
Solution Approach 1:
The gate structure is designed with multi-functionality where the rare earth element supply layer serves both as a diffusion source for threshold voltage adjustment and as a structural component. The metal layers with adjustable work functions provide both electrical functionality and threshold voltage control. This universality allows expanded threshold voltage adjustment range without proportionally increasing device complexity, as the same layers perform multiple functions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the semiconductor device to maintain reliability and performance by allowing for precise adjustment of threshold voltages, ensuring high integration and functionality without the limitations of traditional doping methods.
Implementation Method 1
An interface between the interface layer and the high-dielectric layer may include rare earth elements that diffused from the RE supply layer
Implementation Method 2
the first metal layer may include Al that diffused from the second metal layer
Data Source
AI summary
Semiconductor devices are provided. A semiconductor device includes an insulating layer. The semiconductor device includes a rare earth element supply layer on the insulating layer. Moreover, the semiconductor device includes a metal layer that is on the rare earth element supply layer. The rare earth element supply layer is between the insulating layer and the metal layer. Methods of forming semiconductor devices are also provided.