Semiconductor Module Gate Resistance Temperature Compensation
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Solution Overview
Problem
Semiconductor switching devices experience increased switching loss due to the positive temperature coefficient of their internal resistance, which counteracts the negative temperature coefficient of external resistance, leading to inefficient operation across varying temperatures.
Innovation Solution
A semiconductor module design incorporating a semiconductor chip with a first resistance having a positive temperature coefficient and a second resistance with a negative temperature coefficient, connected in series to achieve a combined resistance temperature coefficient of zero or negative, thereby reducing switching loss and maintaining optimal performance across temperature ranges.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If an external resistance with a negative temperature coefficient is used, then the resistance can be reduced when temperature rises, but the internal resistance of the semiconductor switching device has a positive temperature coefficient which counteracts this effect and may result in a positive overall temperature coefficient
Solution Approach 1:
The gate resistance is divided into two separate resistance elements: a first resistance element with a positive temperature coefficient and a second resistance element with a negative temperature coefficient. This segmentation allows independent optimization of each element's temperature characteristics, enabling the overall gate resistance to maintain a zero or negative temperature coefficient across the operating temperature range, thereby reducing switching loss while ensuring reliable temperature coefficient control.
Solution Approach 2:
The invention changes the temperature coefficient parameter by combining two resistance elements with opposite temperature coefficients. The first resistance element has a positive temperature coefficient and the second has a negative temperature coefficient, and their combination is designed to achieve an overall zero or negative temperature coefficient for the gate resistance, directly addressing the switching loss issue caused by positive temperature coefficients.
2Loss of energy
If the gate resistance is reduced to lower switching loss, then switching efficiency improves, but oscillation phenomena may occur in the switching device
Solution Approach 1:
The invention optimizes the temperature coefficient parameter of the gate resistance to be zero or negative, which maintains appropriate resistance values across temperature ranges. This parameter optimization reduces switching loss while preventing oscillation phenomena that would occur with excessively low resistance values, as the temperature-dependent resistance automatically adjusts to provide damping when needed.
3Productivity
If the gate resistance is optimized for low switching loss, then operational efficiency increases, but the device may not maintain stable performance across varying temperature ranges
Solution Approach 1:
The invention designs the gate resistance with a zero or negative temperature coefficient by combining two resistance elements with opposite temperature coefficients. This parameter design ensures that the gate resistance value remains stable or decreases with temperature, maintaining optimal switching performance and operational efficiency across the entire operating temperature range without degradation.
Solution Approach 2:
The gate resistance is constructed as a composite of two resistance elements with different temperature coefficient characteristics. This composite structure combines a positive temperature coefficient element and a negative temperature coefficient element to achieve an overall zero or negative temperature coefficient, ensuring stable performance across temperature variations while maintaining high operational efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor module effectively reduces switching loss and increases the maximum allowable carrier frequency and current, while mitigating oscillation phenomena and maintaining high upper temperature limits, thus enhancing the operational efficiency and reliability of the switching device.
Implementation Method 1
a first resistance being formed between the control electrode and the control terminal, the first resistance having a positive temperature coefficient; and a second resistance connected to the control terminal, the second resistance having a negative temperature coefficient
Data Source
AI summary
A semiconductor module, including a semiconductor chip that includes a switching device having a control electrode, and a control terminal connected to the control electrode, a first resistance being formed between the control electrode and the control terminal and having a positive temperature coefficient, and a second resistance connected to the control terminal, the second resistance having a negative temperature coefficient. A temperature coefficient of a combined resistance at the control terminal is zero or negative.