Semiconductor Device Gate Resistance Reduction
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Solution Overview
Problem
Existing semiconductor devices face challenges in maintaining stable operations due to high gate resistance and electric field concentration, leading to increased source-drain parasitic capacitance and switching loss.
Innovation Solution
The semiconductor device incorporates a first extension conductive layer electrically connected to the gate electrode, a field plate, and an insulating member with specific insulating portions to reduce gate resistance and electric field concentration, while maintaining a small device size and surface area.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional gate electrode structure is used, then the device structure is simple, but the gate resistance is high leading to unstable operations
Solution Approach 1:
The gate electrode is divided into multiple segments (first gate electrode, second gate electrode, third gate electrode) arranged in a triangular configuration. Each segment is independently connected to the gate potential, allowing for distributed current paths that reduce overall gate resistance while maintaining structural organization.
Solution Approach 2:
The gate electrode structure transitions from a conventional planar configuration to a three-dimensional triangular arrangement. The gate electrodes are positioned at different lateral positions and connected through vertical conductive paths, utilizing the third dimension (depth/vertical direction) to reduce resistance without increasing surface area.
2Area of stationary object
If the device size is reduced, then the surface area is minimized, but the electric field concentration increases
Solution Approach 1:
Insulating portions are selectively positioned at specific locations where electric field concentration occurs (such as at the corners of the triangular gate electrode arrangement). This localized insulation approach addresses the harmful electric field concentration only where needed, without requiring complete device enlargement.
Solution Approach 2:
Insulating portions are introduced as intermediary elements between the gate electrodes and the surrounding environment. These insulating structures mediate the electric field distribution, preventing direct field concentration at critical points while allowing the device to maintain its compact size.
3Loss of time
If the gate electrode is extended to reduce resistance, then the gate delay is reduced, but the device area increases
Solution Approach 1:
Instead of extending gate electrodes horizontally across the device surface, the structure utilizes vertical conductive paths and three-dimensional positioning. The gate electrodes are connected through conductive layers that extend in the vertical direction, reducing resistance without increasing the lateral device footprint.
Solution Approach 2:
Conductive layers are pre-positioned and structured to provide optimal current paths from the gate electrodes to the active regions. The triangular arrangement and associated conductive structures are designed in advance to minimize resistance before the device operates, ensuring low gate delay without requiring additional surface area.
Data Source
AI summary
According to one embodiment, a semiconductor device includes first to fourth electrodes, a semiconductor layer, a first extension conductive layer, first and second electrode connection portions, and an insulating member. The first to fourth electrodes extend along a first direction. The first electrode is between the second and third electrodes in a second direction. The second direction crosses the first direction. The first extension conductive layer extends along the first direction and is electrically connected to the first electrode. The fourth electrode is between the first and third electrodes in the second direction. The first electrode connection portion is electrically connected to the first electrode. The second electrode connection portion is electrically connected to the second and fourth electrodes. The insulating member includes a first insulating portion. The first insulating portion is between the second electrode connection portion and a portion of the first electrode.