Semiconductor Device Gate Structure Segmentation
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Solution Overview
Problem
As semiconductor devices become more highly integrated, achieving stable and reliable transistor performance becomes increasingly challenging due to the reduction in feature size and gate length, which affects the manufacturing process and structure of integrated circuits.
Innovation Solution
The semiconductor device incorporates a substrate with specific patterned structures, including lower patterns, active pattern stacks, fin-cut gate structures, and device isolation layers, arranged in a manner that enhances transistor performance by optimizing the gate and channel regions, and using materials like silicon and germanium for improved insulation and conductivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If feature size and gate length are reduced to achieve higher integration, then device density increases, but transistor performance stability and reliability deteriorate
Solution Approach 1:
The gate structure is segmented into multiple portions (first gate portion, second gate portion, third gate portion) with different configurations. The first and second gate portions surround the active pattern stack from sides, while the third gate portion is disposed on top, creating a divided gate structure that maintains control effectiveness at reduced dimensions
Solution Approach 2:
The gate structure transitions from a conventional planar or single-dimension configuration to a three-dimensional multi-dimensional structure. The gate electrode extends in multiple directions (first direction along the channel, second direction perpendicular to the channel), providing enhanced gate control from multiple spatial dimensions simultaneously
2Productivity
If feature size is reduced to increase integration, then more devices fit on chip, but manufacturing precision requirements increase
Solution Approach 1:
Multiple gate portions (first, second, and third gate portions) are merged into a single integrated gate structure formed through a unified gate formation process. This combining approach simplifies manufacturing by reducing the number of separate fabrication steps required, even though the final structure has complex three-dimensional geometry
Solution Approach 2:
The gate structure serves multiple functions simultaneously: the first and second gate portions provide side-gate control while the third gate portion provides top-gate control, and all portions work together to control the channel. This multi-functional design achieves enhanced performance without requiring separate structures for each function
Data Source
AI summary
A semiconductor device includes a substrate, a first lower pattern and a second lower pattern on the substrate and arranged in a line in a first direction, a first active pattern stack disposed on and spaced apart from the first lower pattern, a second active pattern stack disposed on and spaced apart from the first lower pattern, a fin-cut gate structure disposed on the first lower pattern and overlapping a portion of the first lower pattern, a first gate structure surrounding the first active pattern stack and extending in a second direction crossing the first direction, a second gate structure surrounding the second active pattern stack and extending in the second direction, and a device isolation layer between the first gate structure and the second gate structure and separating the first lower pattern and the second lower pattern.