Semiconductor Gate Pattern With Segmented Dopant Concentrations
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Solution Overview
Problem
Current semiconductor devices face challenges in optimizing the operational characteristics, particularly in reducing turn-on resistance and increasing breakdown voltage between the source and drain regions, which affects their efficiency and performance in applications such as power management integrated circuits (PMICs) and mobile systems.
Innovation Solution
The semiconductor device design includes a unique configuration of dopant concentrations and gate patterns, with specific dopant types and concentrations in different regions, and the use of lightly doped drain (LDD) regions to optimize the channel formation and reduce parasitic capacitance, allowing for improved threshold voltage control and reduced turn-on resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional single-gate structure is used, then the device structure is simple, but the turn-on resistance cannot be sufficiently reduced and breakdown voltage is limited
Solution Approach 1:
The gate electrode is divided into multiple gates (first gate, second gate, third gate) with different dopant concentrations. Each gate segment controls a specific region of the channel, allowing independent optimization of threshold voltages in different areas. This segmentation enables the device to achieve higher breakdown voltage through optimized electric field distribution while managing turn-on resistance through varied doping profiles across the gate structure.
Solution Approach 2:
Different regions of the gate electrode are doped with different concentrations of dopants (first conductivity type). The first gate has a first dopant concentration, the second gate has a second dopant concentration, and the third gate has a third dopant concentration. This local quality variation allows each gate region to be optimized for its specific function: higher doping near the drain for breakdown voltage enhancement, and appropriate doping in other regions for threshold voltage control, thereby resolving the contradiction between simplicity and performance.
2Manufacturing precision
If uniform dopant concentration is used throughout the gate, then the manufacturing process is simple, but the threshold voltage control is insufficient
Solution Approach 1:
The gate electrode is divided into multiple regions with different dopant concentrations. The first gate region receives a first dopant concentration, the second gate region receives a second dopant concentration, and the third gate region receives a third dopant concentration. This local quality approach enables precise threshold voltage control in different channel regions, allowing the device to achieve superior electrical characteristics while maintaining a systematic manufacturing process that can be implemented through sequential or selective doping steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances the breakdown voltage and reduces turn-on resistance between the source and drain, leading to improved operational characteristics and efficiency in semiconductor devices, particularly in PMICs and mobile systems, by optimizing dopant distributions and gate patterns.
Implementation Method 1
a gate pattern on the semiconductor substrate and including dopants of a first conductivity type, wherein the gate pattern includes a first gate adjacent the source region and a second gate adjacent the drain region, and wherein a concentration of the dopants of the first conductivity type in the first gate is higher than a concentration of the dopants of the first conductivity type in the second gate
Implementation Method 2
a first lightly doped drain (LDD) region adjacent the source region and partially overlapping the first gate, wherein the first LDD region may include the first conductivity type dopants and a concentration of the first conductivity type dopants in the first LDD region may be lower than the concentration of the first conductivity type dopants in the first gate
Data Source
AI summary
A semiconductor device includes a gate pattern over source and drain regions. The gate pattern includes a first gate adjacent the source region and a second gate adjacent the drain region. A concentration of dopants in the first gate is higher than a concentration of dopants in the second gate. As a result, channels are produced between the source and drain regions based on different threshold voltages.