Semiconductor Gate Structure Suppressing Short Channel Effect
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Solution Overview
Problem
Current semiconductor devices with gate-all-around structures face challenges in scaling and effectively suppressing the short channel effect (SCE), which affects the potential of the channel region due to drain voltage influence.
Innovation Solution
The semiconductor device incorporates a unique structure with a normal gate and dummy gates surrounding wire patterns, along with epitaxial layers and insulating layers, to improve current control and suppress the short channel effect without increasing gate length, allowing for a more flexible standard cell design.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a gate-all-around structure is used to suppress short channel effect, then transistor performance is improved, but device complexity increases due to multiple gates and wire patterns
Solution Approach 1:
The gate structure is segmented into a normal gate and dummy gates, where the normal gate provides the primary gating function and the dummy gates are positioned to suppress short channel effects at specific locations. This segmentation allows each gate component to address specific performance requirements independently.
Solution Approach 2:
Wire patterns are introduced as intermediary elements that connect the normal gate and dummy gates, enabling electrical control of the dummy gates through the wire patterns. This intermediary structure allows the dummy gates to be controlled without adding excessive complexity to the main gate control circuitry.
2Reliability
If dummy gates are added to suppress short channel effect, then current control is enhanced, but manufacturing precision requirements increase
Solution Approach 1:
The dummy gates are positioned in a different spatial dimension relative to the normal gate, extending in the first direction while the normal gate extends in the second direction. This dimensional arrangement allows the dummy gates to overlap with the field insulating layer and active region without interfering with the primary gate operation, reducing precision requirements for gate-to-gate alignment.
Solution Approach 2:
The dummy gates are specifically positioned to overlap with the field insulating layer at its first end, providing localized suppression of short channel effects only where needed. This local quality approach allows precise control of the electric field in critical regions without requiring high precision across the entire device structure.
3Reliability
If gate length is increased to suppress short channel effect, then transistor performance improves, but scaling capability is reduced
Solution Approach 1:
The gate control function is segmented between the normal gate and dummy gates, allowing the effective gate length to remain short for scaling while the combined structure provides extended short channel effect suppression. The dummy gates compensate for the short channel effects that would otherwise require a longer normal gate.
Solution Approach 2:
Instead of extending the gate length in the channel direction (second direction), the dummy gates extend in the first direction and overlap with the field insulating layer. This dimensional change allows short channel effect suppression without increasing the critical gate length parameter that limits scaling.
Data Source
AI summary
A semiconductor device including an active region having a field insulating layer disposed at a first side thereof; a first wire pattern formed on the active region and extended in a first direction; a normal gate formed on the active region, extended in a second direction crossing the first direction and covering the first wire pattern; and a dummy gate having a first part which overlaps a first end of the field insulating layer and a second part which overlaps the active region, and wherein the dummy gate is formed on the active region and spaced apart from the normal gate in the first direction, wherein the first wire pattern penetrates a third part of the dummy gate and the dummy gate covers a first end of the first wire pattern.