Semiconductor Gate Sidewall Contact Structure for Low Resistance
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Solution Overview
Problem
As integrated circuits scale down, the dimensions of metal gate structures and contact structures shrink, leading to increased contact resistances between these structures and active areas, which affects device performance.
Innovation Solution
A method for manufacturing a semiconductor structure involves forming a sacrificial sidewall on the side surface of a gate structure, followed by the creation of doped regions and the subsequent removal of the sidewall, resulting in a second sidewall that reduces parasitic capacitance and contact resistance by increasing the distance between contact structures and source/drain regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the dimensions of metal gate structures and contact structures are shrunk to scale down integrated circuits, then the integration density is improved, but the contact resistance between these structures and active areas increases
Solution Approach 1:
The patent introduces a sidewall structure that extends vertically from the gate structure, creating an additional dimensional pathway for contact. This sidewall contact approach transforms the traditional planar contact geometry into a three-dimensional structure, increasing the effective contact area between metal contacts and active regions without expanding the footprint, thereby reducing contact resistance while maintaining high integration density
Solution Approach 2:
The sidewall structure is formed preliminarily during the manufacturing process before final contact formation. By pre-establishing the sidewall geometry and doping regions, the patent ensures optimal contact conditions are created in advance, allowing subsequent contact structures to achieve low resistance connections without requiring additional complex processing steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces contact resistance and improves device performance by enhancing the contact area between contact structures and active areas, while maintaining the integrity of the metal-oxide semiconductor field effect transistor (MOSFET) structure.
Implementation Method 1
removing the sacrificial sidewall after a first doped region and a second doped region are respectively formed in the substrate on both sides of the sacrificial sidewall
Implementation Method 2
a first doped region and a second doped region are respectively formed in the substrate on both sides of the sacrificial sidewall
Data Source
AI summary
A method for manufacturing a semiconductor structure includes: providing a substrate, at least a gate structure, a first dielectric layer covering a surface of the substrate and the gate structure being formed on the substrate, and a first dielectric layer on a side surface of the gate structure serving as a first sidewall; forming a sacrificial sidewall on a side surface of the first sidewall; removing the sacrificial sidewall after a first doped region and a second doped region are respectively formed in the substrate on both sides of the sacrificial sidewall; forming a second sidewall on a side surface of the first sidewall.