Semiconductor Structure Simultaneous Gate and Source-Drain Groove Formation
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Solution Overview
Problem
Current semiconductor manufacturing processes face challenges in optimizing electrical performance due to complex and inefficient methods for forming semiconductor structures, particularly in creating gate and source-drain grooves, which affect the integration level and area usage on wafer surfaces.
Innovation Solution
A method involving a base with a device and dummy device region, isolation layer, gate structures, and mask layers is used to form openings and grooves, where the remaining mask layers are used to etch and form dielectric layers in the grooves simultaneously, simplifying the process and improving efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional separate processes are used to form gate grooves and source-drain grooves, then manufacturing precision can be maintained, but process complexity increases and productivity decreases
Solution Approach 1:
The patent combines the formation of gate grooves and source-drain grooves into a single etching process step. By using a unified mask layer patterned with both gate opening and source-drain opening regions, the method performs multiple groove formation operations simultaneously, thereby reducing the total number of process steps and improving manufacturing efficiency without compromising the precision of individual groove formations
2Manufacturing precision
If more process steps are introduced to form semiconductor structures, then manufacturing precision can be improved, but loss of time increases
Solution Approach 1:
The patent employs a preliminary masking step where a mask layer is formed and patterned to define both gate and source-drain opening regions before the actual groove etching. This preliminary action allows subsequent etching processes to proceed simultaneously for both groove types, reducing the cumulative process time while maintaining the precision required for each groove formation through the pre-established mask pattern
3Productivity
If critical dimensions are reduced to increase circuit density, then integration level improves, but area available for interconnection lines decreases
Solution Approach 1:
The patent utilizes vertical stacking of multiple metal interconnection layers above the transistor plane to compensate for the reduced horizontal wafer area. By extending interconnections into the vertical dimension through multiple stacked layers, the method provides sufficient total interconnection area even when critical dimensions are reduced to increase circuit density on the wafer surface
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the semiconductor structure formation process, enhances electrical performance, and improves integration level by allowing for simultaneous formation of gate and source-drain grooves with dielectric layers, thus addressing the inefficiencies in existing methods.
Implementation Method 1
The first mask layer on the gate structures of the dummy device region is removed using a dry etching process
Implementation Method 2
removing, using the remaining first mask layer and second mask layer as masks, the gate structures exposed by the first opening and the source-drain plug exposed by the second opening, forming a gate groove at the bottom of the first opening, and forming a source-drain groove at the bottom of the second opening
Data Source
AI summary
A semiconductor structure and a method for forming the same are provided. One form of a forming method includes: providing a base, the base including a device region and a dummy device region, the base including an isolation layer, gate structures located on the isolation layer, a first mask layer located on the gate structures, a source-drain plug located between the gate structures and on the isolation layer, and a second mask layer located on the source-drain plug. In implementations of the present disclosure, the first mask layer and the second mask layer on the dummy device region are separately removed. Correspondingly, the first opening and the second opening respectively expose the gate structures and the source-drain plug in the dummy device region. The gate structures exposed by the first opening and the source-drain plug exposed by the second opening are removed in the same step. The gate groove at the bottom of the first opening and the source-drain groove at the bottom of the second opening are formed at the same time. Correspondingly, a dielectric layer may be formed in the gate groove and the source-drain groove in the same step. The dielectric layer may block the gate structures and the source-drain plug at the same time. This is advantageous for simplifying the formation process of the semiconductor structure.