Semiconductor Gate Structures with Spacer Protection
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Solution Overview
Problem
Forming gate structures with varying widths on a semiconductor substrate is challenging and can result in damage during subsequent processes, affecting the integrity and performance of semiconductor devices like non-volatile memory devices.
Innovation Solution
The semiconductor device incorporates first, second, and third gate structures with specific widths, capping insulation patterns, and spacer structures to protect the sidewalls of the gate structures during ion implantation and subsequent processes, using a method that involves etching and patterning to form these structures with distinct dimensions and materials for the spacers and capping patterns.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If gate structures with varying widths are formed on a substrate, then the device functionality is improved, but the manufacturing difficulty increases and damage occurs during subsequent processes
Solution Approach 1:
The gate structures are segmented into multiple width categories (first gate structures with first width, second gate structures with second width greater than first width, and third gate structures with third width greater than second width). This segmentation allows for standardized manufacturing processes for each width category while achieving diverse device functionality through the combination of different width types.
Solution Approach 2:
Capping insulation patterns are formed in advance to cover upper portions of the gate structures before subsequent ion implantation processes. This preliminary protective action prevents damage to the gate structures during later manufacturing steps, enabling the production of varied width gate structures without compromising their integrity.
2Adaptability or versatility
If gate structures with varying widths are formed on a substrate, then the device functionality is improved, but the gate structures are damaged due to subsequent processes
Solution Approach 1:
Capping insulation patterns are formed in advance to cover upper portions of the gate structures before subsequent ion implantation processes. This preliminary protective action prevents damage to the gate structures during later manufacturing steps, enabling the production of varied width gate structures without compromising their integrity.
Solution Approach 2:
The capping insulation patterns serve as a protective cushion or shield over the gate structures. This beforehand cushioning absorbs or deflects potential damage from subsequent ion implantation and other harsh processing steps, ensuring that gate structures of various widths maintain their structural integrity throughout manufacturing.
3Reliability
If capping insulation patterns are formed to protect gate structures, then the protection during ion implantation is improved, but the device complexity increases
Solution Approach 1:
The capping insulation patterns serve multiple functions simultaneously: they protect gate structures during ion implantation, define regions for subsequent processing steps, and maintain structural integrity across different gate width types. This multi-functionality reduces the need for additional separate protective structures, thereby limiting the increase in device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the protection of gate structures during ion implantation, reduces damage, and improves the manufacturing process by forming distinct impurity regions and contact plugs, leading to more reliable and efficient semiconductor devices.
Implementation Method 1
enhances the protection of gate structures during ion implantation
Data Source
AI summary
A method of forming a nonvolatile memory device includes forming first, second, and third gate structures, with the second and third gate structures including first and second spacer structures formed on a sidewall of the second gate structure and sidewalls of the third gate structure. Impurity regions are formed through ion implantation and the first spacer structure shields the second and third gate structures during ion implantation. The second spacer structure defines resulting impurity regions.