Semiconductor Gate Spacer Preventing Contact Short Circuits
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Solution Overview
Problem
The rapid scaling down of semiconductor devices leads to a high risk of short circuits between gate electrodes and contacts due to the narrowing gap between them, which existing technologies have not effectively addressed.
Innovation Solution
The formation of spacers in the contact structure with a height greater than the gate patterns to prevent short circuits, involving the creation of trenches between gate patterns, conformal spacer formation, and subsequent removal of insulating layers to ensure the spacer is spaced apart from the gates, thereby preventing contact between the contact metal pattern and the gate patterns.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the gap between gate and contact is reduced to increase integration density, then productivity and integration are improved, but the risk of short circuit between gate electrode and contact increases
Solution Approach 1:
An insulating pattern is introduced as an intermediary element between the gate electrode and the contact. This insulating pattern physically separates the conductive gate and contact structures, preventing direct electrical contact while allowing the gap between them to be minimized for high integration density. The insulating pattern acts as a mediator that enables close spacing without causing short circuits.
Solution Approach 2:
The insulating pattern is formed in advance before the contact structure is completed, proactively preventing the potential short circuit between gate and contact. By establishing this protective barrier beforehand, the design anticipates and counteracts the short circuit risk that would otherwise occur when the gate-contact gap is reduced for higher integration.
2Ease of operation
If the contact structure is enlarged at the upper portion to improve connectivity, then ease of operation is improved, but the gap between gate and contact decreases increasing short circuit risk
Solution Approach 1:
The contact structure is designed with non-uniform dimensions, being enlarged at the upper portion where connectivity is needed and narrower at the lower portion where it approaches the gate. This local variation in geometry allows the contact to provide excellent electrical connectivity at its upper interface while maintaining sufficient separation from the gate electrode through the insulating pattern, thus achieving both ease of operation and reliability.
3Productivity
If scaling down is performed to increase integration, then productivity is improved, but manufacturing precision requirements increase due to narrower gaps
Solution Approach 1:
The insulating pattern serves as a mediator that relaxes manufacturing precision requirements. By introducing this intermediate layer, the design allows for larger tolerances in the gate-contact spacing while still preventing short circuits. The insulating pattern acts as a buffer that compensates for variations in dimensional control during fabrication, enabling scaling down without proportionally increasing precision demands.
Data Source
AI summary
A semiconductor device includes a first gate pattern and a second gate pattern on a substrate, the first gate pattern having a first height and the second gate pattern having a second height, an insulating pattern on the substrate covering the first and second gate patterns, the insulating pattern including a trench exposing the substrate between the first and second gate patterns, a spacer contacting at least a portion of a sidewall of the insulating pattern within the trench, the spacer spaced apart from the first and second gate patterns and having a third height larger than the first and second heights, and a contact structure filling the trench.