Semiconductor Gate Stack with Varying Si Concentration
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving improved operating characteristics, particularly in multi-gate transistors, where scaling and short channel effects limit the control of electric potential and current.
Innovation Solution
The semiconductor device incorporates distinct TiN function films with varying Si concentrations in gate stack structures, allowing for adjusted threshold voltages and reduced process complexity by forming films of the same thickness, which simplifies the manufacturing process and enhances operating characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multi-gate transistor scaling is implemented to increase density, then device density is improved, but control of electric potential and current deteriorates due to short channel effects
Solution Approach 1:
The patent applies local quality by forming function films with different Si concentrations in different regions of the gate stack structure. Specifically, a first function film with a first Si concentration is formed in a first region, and a second function film with a second Si concentration is formed in a second region, allowing different threshold voltages to be achieved in different device regions while maintaining the same physical structure
Solution Approach 2:
The patent utilizes parameter changes by varying the Si concentration parameter in the function films to control threshold voltage. The first function film has a first Si concentration and the second function film has a second Si concentration, where the Si concentrations are different, thereby changing the electrical parameters of the device to achieve multi-threshold voltage functionality
2Reliability
If different threshold voltages are achieved by forming function films with different Si concentrations, then operating characteristics are improved, but manufacturing complexity increases
Solution Approach 1:
The patent merges multiple functions into a single manufacturing process step. By forming function films with different Si concentrations simultaneously in different regions during the same deposition process, the patent combines what would otherwise require separate processing steps, thereby reducing manufacturing complexity while achieving multi-threshold voltage devices with different operating characteristics
Data Source
AI summary
A semiconductor device and a method for fabricating the same are provided. The semiconductor device includes first and second gate stack structures formed in first and second regions, respectively, wherein the first gate stack structure is formed adjacent a first channel region and comprises a first gate insulating film having a first thickness formed on the first channel region, a first function film having a second thickness formed on the first gate insulating film and a first filling film having a third thickness formed on the first function film, wherein the second gate stack structure is formed adjacent a second channel region and comprises a second gate insulating film having the first thickness formed on the second channel region, a second function film having the second thickness formed on the second gate insulating film and a second filling film having the third thickness formed on the second function film, wherein the first and second function films, respectively, comprise TiN and Si concentrations that are different from each other.