Semiconductor Gate Structure Thickness Compensation for Uniformity
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Solution Overview
Problem
Existing semiconductor manufacturing processes face challenges in achieving uniformity of gate lengths and electrical properties as device sizes shrink, leading to inadequate performance and yield in miniaturized semiconductor devices.
Innovation Solution
A semiconductor device structure is formed with a conductive layer having a thick and thin portion, where a mask layer with varying trench densities is used to etch the conductive layer, resulting in gate structures with similar gate lengths, and spacers are added to improve critical dimension uniformity and drain saturation current uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If device sizes are miniaturized to increase integration levels, then productivity and integration are improved, but manufacturing precision and uniformity of gate lengths deteriorate
Solution Approach 1:
The patent applies local quality by creating a conductive layer with non-uniform thickness distribution, where different regions have different thicknesses. This local variation in thickness compensates for width differences in gate structures, enabling uniform gate lengths to be achieved despite variations in gate widths. The mask layer with varying trench densities also represents local quality, as it creates different etching rates in different regions to achieve the desired thickness profile.
Solution Approach 2:
The patent changes physical parameters of the conductive layer, specifically its thickness, to compensate for dimensional variations. By controlling the thickness of the conductive layer in different regions and adjusting mask layer trench densities, the etching process parameters are modified to achieve uniform gate lengths. This parameter change approach allows the system to maintain manufacturing precision while continuing to scale down device sizes.
2Area of stationary object
If device sizes are shrunk to achieve higher integration, then area is reduced, but uniformity of electrical properties deteriorates
Solution Approach 1:
The patent uses local quality by implementing a conductive layer with spatially varying thickness and a mask layer with non-uniform trench density. These local variations are designed to compensate for width differences in miniaturized gate structures, ensuring that electrical properties such as drain saturation current remain uniform across the chip even as device sizes shrink and integration increases.
3Adaptability or versatility
If gate structures are formed with varying widths, then device design flexibility is improved, but uniformity of gate lengths deteriorates
Solution Approach 1:
The patent changes the thickness parameter of the conductive layer and the trench density parameter of the mask layer to compensate for gate width variations. This allows gate structures with different widths to achieve uniform gate lengths after etching, maintaining manufacturing precision while preserving design flexibility. The relationship between conductive layer thickness, mask trench density, and etching rate is carefully controlled to achieve this compensation effect.
Data Source
AI summary
A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a first source region, a second source region, a first drain region, and a second drain region. The semiconductor device structure includes a first gate structure over the substrate and between the first source region and the first drain region. The semiconductor device structure includes a second gate structure over the substrate and between the second source region and the second drain region. A first thickness of the first gate structure is greater than a second thickness of the second gate structure. A first gate width of the first gate structure is less than a second gate width of the second gate structure.