Semiconductor Gate Structure for High-Voltage Oxide Thickness Control
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Solution Overview
Problem
Existing semiconductor devices face challenges in increasing data storage capacity and operational reliability, particularly in high-voltage regions where gate insulating layer thickness distribution is compromised during manufacturing processes.
Innovation Solution
The semiconductor device is designed with a substrate having defined active regions and transistors with specific gate structures, including high dielectric layers and metal gate electrodes, where the first transistor in the high-voltage region is protected by a polysilicon layer, ensuring the integrity of the gate insulating layer thickness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the gate insulating layer thickness is increased to improve reliability, then operational reliability is improved, but manufacturing precision deteriorates due to thickness distribution control issues in high-voltage regions
Solution Approach 1:
The patent applies different gate insulating layer thicknesses to different voltage regions: a first thickness in high-voltage regions and a second thickness in low-voltage regions. This local differentiation allows the high-voltage region to have sufficient thickness for reliability while the low-voltage region maintains precise thickness control for manufacturing feasibility.
Solution Approach 2:
The gate insulating layer is segmented into multiple regions with different thickness characteristics. The high-voltage region and low-voltage region are treated as separate segments with optimized thickness values, allowing independent optimization of reliability and manufacturing precision for each segment.
2Manufacturing precision
If the gate insulating layer thickness is reduced to improve manufacturing precision, then manufacturing precision is improved, but operational reliability deteriorates in high-voltage regions
Solution Approach 1:
The patent implements local quality optimization by assigning different thickness values to different functional regions. The high-voltage region maintains greater thickness for reliability, while the low-voltage region uses thinner layers for manufacturing precision, thereby resolving the contradiction between the two requirements.
Solution Approach 2:
By segmenting the gate insulating layer into high-voltage and low-voltage regions with different thickness characteristics, the patent allows each segment to be optimized independently - reliability for high-voltage regions and manufacturing precision for low-voltage regions.
Data Source
AI summary
A semiconductor device includes a substrate having a first active region, a second active region, and a third active region, a first transistor on the first active region and including a first gate structure, which includes a first gate insulating layer and a first gate electrode, a second transistor on the second active region and including a second gate structure, which includes a second gate insulating layer including a high dielectric layer, a work function metal layer, and a second gate electrode, and a third transistor on the third active region and including a third gate structure, which includes a third gate insulating layer including a high dielectric layer, a work function metal layer, and a third gate electrode, wherein the first gate electrode includes a first semiconductor layer and a second semiconductor layer that are sequentially arranged on the first gate insulating layer and each include polysilicon.