Semiconductor Gate Electrode Structure for Threshold Voltage Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The scale-down of metal-oxide-semiconductor field-effect transistors (MOSFETs) in semiconductor devices leads to deterioration in operational properties, necessitating improved electric characteristics.
Innovation Solution
A semiconductor device design featuring a substrate with active regions, trench isolation, and gate electrodes with specific metal patterns that extend across active patterns, including vertical portions and line portions, to enhance electrical connectivity and control.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If MOSFETs are scaled down to meet increasing demand for small pattern size, then device density and integration are improved, but operational properties and electric characteristics deteriorate
Solution Approach 1:
The gate electrode is divided into multiple metal patterns (first metal pattern, second metal pattern, third metal pattern, fourth metal pattern) arranged in series. Each metal pattern corresponds to a specific region of the channel, allowing independent optimization of electrical characteristics for different segments of the transistor while maintaining overall functionality.
Solution Approach 2:
Different metal patterns with different materials and thicknesses are used in different regions of the gate electrode. The first and second metal patterns have different properties than the third and fourth metal patterns, enabling local optimization of threshold voltage, transconductance, and other electrical characteristics in specific channel regions.
2Ease of manufacture
If gate electrode structure is simplified, then manufacturing process is easier, but control precision over threshold voltage deteriorates
Solution Approach 1:
The gate electrode utilizes multiple metal patterns with varying materials, thicknesses, and positions to precisely control the threshold voltage. By changing parameters such as metal material composition, layer thickness, and horizontal positioning, precise control over electrical characteristics is achieved while maintaining a systematic fabrication process.
Data Source
AI summary
A semiconductor device includes a substrate including first and second active regions, first and second active patterns on the first and second active regions, and a gate electrode crossing the first and second active patterns. The gate electrode may include first and second electrode portions on the first and second active regions. The first electrode portion may include a first metal pattern and a second metal pattern on the first metal pattern. The second electrode portion may include a third metal pattern and a fourth metal pattern on the third metal pattern. The first metal pattern may include a first line portion and a first vertical portion extended from the first line portion, and the third metal pattern may include a second line portion and a second vertical portion extended from the second line portion. The first and second vertical portions may be in contact with each other.