Semiconductor Gate Structure With Variable Widths
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Solution Overview
Problem
As semiconductor devices shrink in size, the increased proximity of signal lines can lead to interference issues, affecting device reliability and performance.
Innovation Solution
A semiconductor device design featuring a substrate with active regions and isolation regions, where gate trenches and gate structures with varying widths across these regions are used to minimize electrical interference, including a gate dielectric layer between the trench and the gate structure, and the gate structure's width adjusts based on its longitudinal position.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If device size is reduced to increase integration density, then productivity and miniaturization are improved, but electrical interference between adjacent signal lines increases
Solution Approach 1:
The gate structure implements local quality by having different widths in different regions: a first width in the active region and a second width in the isolation region. This allows the gate to be wider where needed for electrical connection and narrower where interference must be minimized, directly resolving the contradiction between integration density and electrical interference.
Solution Approach 2:
The gate structure is segmented into multiple portions with different widths along its length. The gate includes a first portion with a first width and a second portion with a second width, allowing each segment to serve different functions - one for electrical connection and one for minimizing interference - thereby enabling high integration density without excessive electrical interference.
2Reliability
If gate structure width is increased to reduce resistance, then electrical connection is improved, but device area increases
Solution Approach 1:
The gate structure applies local quality by positioning a wider first portion specifically in the active region where low resistance is needed for electrical connection, while maintaining a narrower second portion in the isolation region where area must be minimized. This resolves the contradiction by providing the right width in the right location.
Solution Approach 2:
The gate is divided into segmented portions with different widths - a first portion with greater width for electrical connection and a second portion with lesser width for area efficiency. This segmentation allows the gate to simultaneously achieve low resistance and small area by optimizing each segment's dimensions for its specific function.
Data Source
AI summary
Semiconductor devices are provided. A semiconductor device includes a substrate including a plurality of active regions that extend longitudinally in a direction and an isolation region that electrically isolates the plurality of active regions from each other. The semiconductor device includes a gate trench that extends across the plurality of active regions and the isolation region. The semiconductor device includes a gate structure that extends in the gate trench. The semiconductor device includes a gate dielectric layer that is between the gate trench and the gate structure, in each of the plurality of active regions. The gate structure has a first width in the direction in each of the plurality of active regions and has a second width in the direction in the isolation region that is different from the first width.