Semiconductor Gate Structure With Vertical Substrate Extension
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Solution Overview
Problem
The challenge in the semiconductor industry is to form reliable semiconductor devices at increasingly smaller sizes due to the complexity and difficulty of fabrication processes as feature sizes decrease, affecting production efficiency and costs.
Innovation Solution
A semiconductor device structure is formed using a process that includes forming trenches in a semiconductor substrate, filling them with an isolation structure, implanting dopants, and creating a gate structure that extends into the substrate to separate source and drain regions, improving breakdown voltage and reducing gate length while maintaining required voltages.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If feature sizes continue to decrease to increase functional density, then production efficiency improves and costs decrease, but fabrication process difficulty increases and device reliability deteriorates
Solution Approach 1:
The device is segmented into multiple regions including a first trench isolation region, a second trench isolation region, and a buried isolation region. This segmentation allows each region to be optimized independently for its specific function, enabling reliable fabrication at smaller feature sizes while maintaining overall device performance
Solution Approach 2:
Different isolation structures are applied in different locations: shallow trenches for some regions and deeper buried isolation for others. This local differentiation optimizes the electrical characteristics and mechanical stability in each specific area, improving reliability without requiring uniform scaling across the entire device
2Productivity
If feature sizes continue to decrease to increase functional density, then production efficiency improves and costs decrease, but fabrication process complexity increases
Solution Approach 1:
The fabrication process is segmented into distinct stages: forming first trenches, filling with first isolation material, forming second trenches, filling with second isolation material, and forming buried isolation regions. This segmentation allows each process step to be optimized and controlled independently, managing overall process complexity while achieving high functional density
Solution Approach 2:
The isolation structures extend in multiple dimensions - both laterally in shallow trenches and vertically in buried isolation regions. This multi-dimensional approach allows compact device layout (improving productivity) while using vertical space efficiently to reduce lateral feature size requirements
3Productivity
If gate length is reduced to increase functional density, then production efficiency improves, but breakdown voltage decreases
Solution Approach 1:
The gate structure extends vertically into the substrate rather than only laterally. This vertical extension increases the effective gate length and breakdown voltage without requiring larger lateral dimensions, allowing compact device layout (improving productivity) while maintaining electrical performance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the reliability and efficiency of semiconductor device fabrication by improving breakdown voltage and reducing gate length, thus addressing the challenges of smaller feature sizes and increasing complexity in the manufacturing process.
Implementation Method 1
implanting dopants
Data Source
AI summary
A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate having a top surface, a source region, and a drain region. The semiconductor device structure includes a gate structure over the top surface and extending into the semiconductor substrate. The gate structure in the semiconductor substrate is between the source region and the drain region and separates the source region from the drain region. The semiconductor device structure includes an isolation structure in the semiconductor substrate and surrounding the source region, the drain region, and the gate structure in the semiconductor substrate.