Semiconductor Gate Structure Void Insulation
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Solution Overview
Problem
The challenge in semiconductor technology is forming contact structures corresponding to source/drain structures when the spacing between gate lines becomes extremely small, leading to interference and electrical influence due to the close proximity between the contact structure and the gate line, which is difficult to address under the limitations of photolithography processes.
Innovation Solution
A void is formed in a mask layer between a metal gate electrode and a spacer to enhance insulation between the gate structure and the contact structure, improving the electrical performance by creating a narrow space that allows for better isolation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the spacing between gate lines is reduced to increase device density, then the integration density is improved, but interference and electrical influence between contact structure and gate line increases
Solution Approach 1:
The patent introduces a mask layer with a void as an intermediary structure between the contact structure and the gate line. This mask layer acts as a mediator that provides additional insulation and reduces electrical influence while allowing the gate lines to remain closely spaced for high integration density.
Solution Approach 2:
The patent segments the space between the contact structure and gate line by introducing a void within the mask layer. This segmentation creates distinct regions that reduce electrical coupling and interference while maintaining the compact layout required for high device density.
2Volume of moving object
If the distance between contact structure and gate line is reduced, then the device size is minimized, but insulation effect deteriorates
Solution Approach 1:
The patent applies local quality by creating a void specifically in the region where insulation is most critical - between the contact structure and gate line. The mask layer with void provides enhanced local insulation exactly where needed, while the rest of the device structure remains compact.
Solution Approach 2:
The mask layer with void serves as an intermediary insulation layer that enhances the insulation effect in the narrow space between contact and gate structures, allowing minimal device size while maintaining reliable electrical isolation.
3Ease of manufacture
If photolithography process is used with extreme small spacing, then manufacturing capability is maintained, but formation of contact structures becomes difficult
Solution Approach 1:
The patent applies preliminary action by forming the mask layer with void structure before forming the contact structures. This pre-established mask structure guides and facilitates the subsequent contact formation process, making it easier to achieve precise contact structures even at extreme small spacings that would be difficult with photolithography alone.
Data Source
AI summary
A semiconductor device includes a substrate, a gate structure, a spacer, a mask layer, and at least one void. The gate structure is disposed on the substrate, and the gate structure includes a metal gate electrode. The spacer is disposed on sidewalls of the gate structure, and a topmost surface of the spacer is higher than a topmost surface of the metal gate electrode. The mask layer is disposed on the gate structure. At least one void is disposed in the mask layer and disposed between the metal gate electrode and the spacer.